IRFR/U220A FAIRCHILD [Fairchild Semiconductor], IRFR/U220A Datasheet - Page 2

• Manufacturer Part Number: IRFR/U220A
• Description: Advanced Power MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

O
O
O
O
O
IRFR/U220A
4
2
5
3
1
Symbol
Electrical Characteristics
BV/ T
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
R
BV
V
t
t
V
I
I
C
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=5mH, I
I
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
C
C
GS(th)
Q
Q
I
Q
DS(on)
d(on)
d(off)
SD
GSS
DSS
g
Q
I
SM
t
t
SD
t
S
rr
oss
rss
DSS
iss
fs
r
f
gs
gd
rr
g
< _
5A, di/dt 180A/ s, V
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
=4.6A, V
< _
DD
Characteristic
Characteristic
=50V, R
DD
< _
BV
G
=27 , Starting T
DSS
, Starting T
(T
C
=25
< _
J
O
O
4
=25
1
J
o
=25
C
Min.
Min.
unless otherwise specified)
200
2.0
--
--
--
--
--
o
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
C
o
C
Typ.
Typ.
0.24
2.36
0.51
275
122
2.4
6.2
55
25
10
11
26
15
12
--
--
--
--
--
--
--
--
--
--
Max. Units
Max. Units
-100
100
100
360
4.0
0.8
4.6
1.5
10
18
65
30
30
30
60
40
17
--
--
--
--
--
--
--
V/
nA
nC
pF
ns
ns
V
V
A
V
C
A
o
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
=250 A
G
=5A
F
=25
=25
=18
/dt=100A/ s
=0V,I
=5V,I
=30V
=-30V
=200V
=160V,T
=10V,I
=40V,I
=0V,V
=100V,I
=160V,V
See Fig 13
Test Condition
POWER MOSFET
Test Condition
o
o
C
See Fig 5
C
,I
N-CHANNEL
D
,I
D
S
DS
=250 A
=250 A
D
D
F
=4.6A,V
=5A
=2.3A
=2.3A
D
=25V,f =1MHz
C
GS
=5A,
=125
See Fig 7
=10V,
GS
o
C
=0V
O
O
4
4
O
O
4
4
O
O
O
5
5
4