MPF102_04 FAIRCHILD [Fairchild Semiconductor], MPF102_04 Datasheet
MPF102_04
Manufacturer Part Number
MPF102_04
Description
N-Channel RF Amplifier
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.MPF102_04.pdf
(3 pages)
©2004 Fairchild Semiconductor Corporation
N-Channel RF Amplifier
• This device is designed for electronic switching applications such as
• Sourced from process 50.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
Thermal Characteristics
V
V
I
T
Off Characteristics
V
I
V
V
On Characteristics *
I
g
Small Signal Characteristics
C
C
P
R
R
GF
GSS
DSS
low ON resistance analog switching.
fs
J
DG
GS
(BR)GSS
gs(off)
gs
D
iss
rss
Symbol
Symbol
, T
JC
JA
Symbol
STG
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Voltage
Zero-Gate Voltage Drain Current
Forward Transconductance
Common-Source Input Capacitance
Common-Source Reverse Transfer
Capacitance
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
T
a
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
T
Parameter
a
=25 C unless otherwise noted
MPF102
I
V
V
V
V
V
V
V
G
GS
DS
DS
DS
GS
GS
GS
= -1.0 A, V
= -15V, V
= 15V, I
= 15V, I
= 15V, V
= 0V, V
= 0, V
= 0, V
Test Condition
DS
DS
DS
D
D
GS
= 15V, f = 1MHz
= 15V, f = 1MHz
DS
DS
= 2nA
= 200 A
= 15V, f = 1kHz
= 0
= 0
= 0
1. Drain 2. Source 3. Gate
1
- 55 ~ +155
Value
-25
25
10
2000
Min.
-0.5
-25
2.0
Max.
350
125
357
2.8
TO-92
7500
Max.
-2.0
-8.0
-7.5
7.0
3.0
20
Rev. B, October 2004
mW/ C
Units
mW
C/W
C/W
Units
mA
V
V
Units
C
mA
nA
pF
pF
V
V
V
S
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MPF102_04 Summary of contents
Page 1
N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourced from process 50. Absolute Maximum Ratings * Symbol V Drain-Gate Voltage DG V Gate-Source Voltage GS I Forward Gate ...
Page 2
Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, October 2004 ...
Page 3
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ ...