MT45W1MW16BDGB-708 AT TR Micron Technology Inc, MT45W1MW16BDGB-708 AT TR Datasheet - Page 13

• Manufacturer Part Number: MT45W1MW16BDGB-708 AT TR
• Description: IC PSRAM 16MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BDGB-708 AT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1419-2

Figure 8:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
Burst Mode READ (4-word Burst)
DQ[15:0]
LB#/UB#
A[19:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
Note:
The CE# LOW time is limited by refresh considerations. CE# must not stay LOW longer
than
will cause CE# to remain LOW for longer than
burst restarted with a new CE# LOW/ADV# LOW cycle.
READ Burst Identified
Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT
asserted during delay.
t
ADDRESS
(WE# = HIGH)
CEM unless row boundaries are crossed at least every
VALID
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Latency Code 2 (3 clocks)
13
D[0]
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[1]
t
CEM, CE# should be taken HIGH and the
DON’T CARE
D[2]
t
CEM. If a burst suspension
Bus Operating Modes
©2005 Micron Technology, Inc. All rights reserved.
UNDEFINED
D[3]