MT45W1MW16BDGB-708 AT TR Micron Technology Inc, MT45W1MW16BDGB-708 AT TR Datasheet - Page 14

• Manufacturer Part Number: MT45W1MW16BDGB-708 AT TR
• Description: IC PSRAM 16MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BDGB-708 AT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1419-2

Figure 9:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
DQ[15:0]
Burst Mode WRITE (4-word Burst)
LB#/UB#
A[19:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
Note:
WRITE Burst Identified
Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT
asserted during delay.
ADDRESS
(WE# = LOW)
VALID
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Latency Code 2 (3 clocks)
14
D[0]
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[1]
D[2]
Bus Operating Modes
©2005 Micron Technology, Inc. All rights reserved.
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D[3]