MT45W1MW16BDGB-708 AT TR Micron Technology Inc, MT45W1MW16BDGB-708 AT TR Datasheet - Page 48

• Manufacturer Part Number: MT45W1MW16BDGB-708 AT TR
• Description: IC PSRAM 16MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BDGB-708 AT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1419-2

Figure 38:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
DQ[15:0]
LB#/UB#
A[19:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IL
IH
IL
IH
IL
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
Burst WRITE Operation
WRITE Burst Identified
Note:
t CSP
(WE# = LOW)
t SP
t SP
ADDRESS
t SP
High-Z
t CEW
VALID
t HD
t HD
t HD
Non-default BCR settings for burst WRITE operation: Latency code two (three clocks);
WAIT active LOW; WAIT asserted.
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
t CLK
t KHTL
t SP
48
t SP t HD
D[0]
t HD
t KP
t CEM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[1]
t KP
D[2]
©2005 Micron Technology, Inc. All rights reserved.
D[3]
Timing Diagrams
t HD
t HZ
t KHKL
t CBPH
DON’T CARE
High-Z