SMCJ18A_Q Fairchild Semiconductor, SMCJ18A_Q Datasheet
SMCJ18A_Q
Manufacturer Part Number
SMCJ18A_Q
Description
TVS Diodes - Transient Voltage Suppressors 1500W TVS Unidirectional
Manufacturer
Fairchild Semiconductor
Series
SMCJr
Datasheet
1.SMCJ18A_Q.pdf
(4 pages)
Specifications of SMCJ18A_Q
Product Category
TVS Diodes - Transient Voltage Suppressors
Polarity
Unidirectional
Operating Voltage
18 V
Breakdown Voltage
20 V
Clamping Voltage
29.2 V
Peak Surge Current
5 uA
Package / Case
DO-214AB
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Channels
1 Channel
Dimensions
6.25 (Max) mm W x 7.15 (Max) mm L
Peak Pulse Power Dissipation
1500 W
Termination Style
SMD/SMT
2011 Fairchild Semiconductor Corporation
P
I
I
T
T
Symbol
PPM
FSM
1500 Watt Transient Voltage Suppressors
Absolute Maximum Ratings*
stg
J
PPM
*
Note 1: Measured on 8.3 ms single half-sine wave or equivalent square wave; Duty cycle = 4 pulses per minute maximum.
Features
•
•
•
•
•
•
•
•
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Glass passivated junction.
1500 W Peak Pulse Power capability
Excellent clamping capability.
Low incremental surge resistance.
Fast response time; typically less
than 1.0 ps from 0 volts to BV for
bidirectional.
Typical I
UL certificate #E326243 and E210467.
UL94V-0 Flammability Classification.
unidirectional and 5.0 ns for
on 10/1000 s waveform.
R
Peak Pulse Power Dissipation on 10/1000 s waveform
Peak Pulse Current on 10/1000 s waveform
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
less than 1.0 A above 10V.
superimposed on rated load (JEDEC method)
Transient Voltage Suppressors
SMCJ5V0(C)A - SMCJ170(C)A
DEVICES FOR BIPOLAR APPLICATIONS
- Electrical Characteristics apply in both directions.
Parameter
- Bidirectional types use CA suffix.
T
A
= 25°C unless otherwise noted
(Note 1)
ON UNIDIRECTIONAL DEVICES ONLY.
NO COLOR BAND ON BIDIRECTIONAL
COLOR BAND DENOTES CATHODE
SMC/DO-214AB
DEVICES.
-55 to +150
see table
Value
+ 150
1500
200
SMCJ5V0(C)A-SMCJ170(C)A, Rev. H4
Units
W
A
A
C
C
Related parts for SMCJ18A_Q
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Schottky (Diodes & Rectifiers) 40 Volt 3.0 Amp 100 Amp IFSM
Manufacturer:
Vishay
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
SMCJ18A_Q Summary of contents
Page 1
... These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Note 1: Measured on 8.3 ms single half-sine wave or equivalent square wave; Duty cycle = 4 pulses per minute maximum. 2011 Fairchild Semiconductor Corporation SMC/DO-214AB COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL DEVICES ONLY. ...
Page 2
Electrical Characteristics U ni-directional P art B i-directional ( arking* D evice J5V 0 J6V 0 J6V 5 ...
Page 3
Typical Characteristics Peak Pulse Power Rating Curve 100 0.1 0.0001 0.001 0.01 0.1 PULSE WIDTH (ms) Pulse Waveform 150 º Pulse Width (td) is Defined ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...