BAS29_S00Z

Manufacturer Part NumberBAS29_S00Z
DescriptionRectifiers Gen Purpose Diode High Voltage
ManufacturerFairchild Semiconductor
BAS29_S00Z datasheet
 

Specifications of BAS29_S00Z

Product CategoryRectifiersRohsyes
ProductStandard Recovery RectifiersConfigurationSingle
Reverse Voltage120 VForward Voltage Drop1.25 V at 0.4 A
Recovery Time50 nsForward Continuous Current0.2 A
Max Surge Current2 AReverse Current Ir0.1 uA
Mounting StyleSMD/SMTPackage / CaseSOT-23
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Power Dissipation0.35 WFactory Pack Quantity750
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3
2
1
SOT-23
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
Maximum Repetitive Reverse Voltage
RRM
I
Average Rectified Forward Current
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
T
stg
Operating Junction Temperature
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
Power Dissipation
D
Thermal Resistance, Junction to Ambient
R
JA
Electrical Characteristics
Symbol
Parameter
V
Breakdown Voltage
R
V
*
Forward Voltage
F
I
*
Reverse Current
R
C
Total Capacitance
T
Reverse Recovery Time
t
rr
*
Pulse test : Pulse width=300us, Duty Cycle=2%
2002 Fairchild Semiconductor Corporation
BAS29
3
L20
1
2
T
= 25°C unless otherwise noted
A
Parameter
Parameter
T
= 25°C unless otherwise noted
A
Test Conditions
I
= 1.0 mA
R
I
= 10 mA
F
I
= 50 mA
F
I
= 100 mA
F
I
= 200 mA
F
I
= 400 mA
F
V
= 90 V
R
V
= 90 V, T
= 150 C
R
A
V
= 0, f = 1.0 MHz
R
I
= I
= 30 mA, I
= 3.0 mA,
F
R
RR
R
= 100
L
Connection Diagram
3
1
2NC
Value
Units
120
V
200
mA
1.0
A
2.0
A
-55 to +150
C
150
C
Value
Units
350
mW
357
C/W
Min
Max
Units
V
120
0.75
V
0.84
V
0.90
V
1.00
V
1.25
V
100
nA
100
A
2.0
pF
50
ns
BAS29, Rev. A

BAS29_S00Z Summary of contents

  • Page 1

    ... Forward Voltage Reverse Current R C Total Capacitance T Reverse Recovery Time Pulse test : Pulse width=300us, Duty Cycle=2% 2002 Fairchild Semiconductor Corporation BAS29 3 L20 25°C unless otherwise noted A Parameter Parameter T = 25°C unless otherwise noted A Test Conditions I = 1.0 mA ...

  • Page 2

    CROSSVOLT â â â â Rev. H5 ...