BAS16_S00Z Fairchild Semiconductor, BAS16_S00Z Datasheet
BAS16_S00Z
Manufacturer Part Number
BAS16_S00Z
Description
Rectifiers High Conductance Ultra Fast
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAS16_S00Z.pdf
(4 pages)
Specifications of BAS16_S00Z
Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
85 V
Forward Voltage Drop
1.25 V at 0.15 A
Recovery Time
6 ns
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Reverse Current Ir
1 uA
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Power Dissipation
0.35 W
Factory Pack Quantity
750
2001 Fairchild Semiconductor Corporation
*
Small Signal Diode
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Absolute Maximum Ratings*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Symbol
Symbol
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
T
JA
3
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
SOT-23
1
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
2
Parameter
Parameter
T
A
= 25°C unless otherwise noted
BAS16
T
A
= 25°C unless otherwise noted
1
I
I
I
I
I
V
V
V
V
I
R
R
F
F
F
F
F
A6
R
R
R
R
L
= 1.0 mA
= 10 mA
= 50 mA
= 150 mA
= I
= 5.0 A
= 75 V
= 25 V, T
= 75 V, T
= 0, f = 1.0 MHz
= 100
3
Test Conditions
R
= 10 mA, I
2
A
A
= 150 C
= 150 C
RR
= 1.0 mA,
Connection Diagram
-55 to +150
-55 to +150
Min
Value
Value
85
200
350
357
1.0
2.0
85
1
3
Max
1.25
715
855
2NC
1.0
1.0
2.0
6.0
30
50
Units
Units
Units
mW
mA
C/W
V
A
A
C
C
mV
mV
pF
ns
V
V
V
BAS16, Rev. C
A
A
A
Related parts for BAS16_S00Z
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
BAS16_S00Z Summary of contents
Page 1
... Electrical Characteristics Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Current R C Total Capacitance T Reverse Recovery Time t rr 2001 Fairchild Semiconductor Corporation BAS16 25°C unless otherwise noted A Parameter Parameter T = 25°C unless otherwise noted A Test Conditions ...
Page 2
Typical Characteristics 150 Ta 140 130 120 110 Reverse Current, I [uA] R Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 uA 485 Ta 450 400 ...
Page 3
Typical Characteristics (continued 3.5 3 2 Reverse Current [mA] IRR (Reverse Recovery Current Rloop = 100 Ohms Figure 7. Reverse Recovery Time vs Reverse Current ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...