FDMS8558SDC Fairchild Semiconductor, FDMS8558SDC Datasheet

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FDMS8558SDC

Manufacturer Part Number
FDMS8558SDC
Description
MOSFET N-Channel PowerTrench SyncFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS8558SDC

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
25 V
Continuous Drain Current
17 A
Resistance Drain-source Rds (on)
5.7 mOhms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power-33
Minimum Operating Temperature
- 55 C
Power Dissipation
41 W
©2012 Fairchild Semiconductor Corporation
FDMS8558SDC Rev.C
FDMS8558SDC
N-Channel PowerTrench
25 V, 90 A, 1.5 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
R
R
R
R
R
D
J
DS
GS
AS
D
θJC
θJC
θJA
θJA
θJA
θJA
θJA
Dual Cool
Max r
Max r
High performance technology for extremely low r
SyncFET
RoHS Compliant
, T
Pin 1
Symbol
Device Marking
STG
DS(on)
DS(on)
09DC
TM
TM
= 1.5 mΩ at V
= 1.7 mΩ at V
Schottky Body Diode
PQFN package
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMS8558SDC
= 10 V, I
= 4.5 V, I
-Continuous
-Continuous (Package limited)
-Pulsed
Device
Power 56
D
D
= 38 A
= 36 A
T
®
D
A
= 25°C unless otherwise noted
D
SyncFET
Parameter
DS(on)
D
D
Bottom
Power 56
Package
1
TM
T
T
T
S
T
General Description
This N-Channel SyncFET
Semiconductor’s
Advancements in both silicon and package technologies have
been combined to offer the lowest r
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
C
C
A
A
= 25 °C
S
= 25 °C
= 25 °C
= 25 °C
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
S
G
Reel Size
(Bottom Drain)
(Top Source)
13’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1k)
(Note 1i)
(Note 1j)
(Note 3)
advanced
D
D
D
D
5
6
7
8
TM
Tape Width
is produced using Fairchild
12 mm
-55 to +150
Ratings
PowerTrench
DS(on)
140
145
3.3
2.8
1.4
25
12
90
38
89
38
81
16
23
11
while maintaining
June 2012
www.fairchildsemi.com
3000 units
®
Quantity
4
3
2
1
process.
G
Units
S
S
°C/W
S
mJ
°C
W
V
V
A

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FDMS8558SDC Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 09DC FDMS8558SDC ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C ® TM SyncFET General Description This N-Channel SyncFET Semiconductor’ Advancements in both silicon and package technologies have = 36 A ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev °C unless otherwise noted J Test Conditions mA mA, referenced to 25 °C D ...

Page 3

... Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 145 mJ is based on starting ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev °C/W when mounted pad copper 2 pad copper 2 ...

Page 4

... 100 125 1.2 1.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev °C unless otherwise noted 2 μ s 0.6 0.8 Figure 100 125 150 200 100 ...

Page 5

... T = MAX RATED J 0 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev °C unless otherwise noted J 10000 100 100 ...

Page 6

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev °C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION ( ...

Page 7

... SyncFET Schottky body diode Characteristics TM Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8558SDC ...

Page 8

... Dimensional Outline and Pad Layout (0.90) PKG (3.30 (0.82) PIN #1 IDENT MAY APPEAR AS OPTIONAL 1.27 (0.34) 0.71 0.44 CHAMFER CO RNER AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 0.10 C 0.08 C 1.05 0.95 ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C 5.10 4.90 A (2.60) PKG 4.52 3.75 6.25 5.90 1. TOP VIEW SEE 1.27 DETAIL A FRONT VIEW O PTIONAL DRAFT ANGLE 3.81 MAY APPEAR ON FOUR SIDES OF THE PACKAGE 0 ...

Page 9

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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