FDMS86540_F142 Fairchild Semiconductor, FDMS86540_F142 Datasheet - Page 2

• Manufacturer Part Number: FDMS86540_F142
• Description: MOSFET 60V N-Chan PwrTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86540_F142

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 3.4 mOhms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 96 W

©2011 Fairchild Semiconductor Corporation
FDMS86540 Rev. C
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
rr
DS(on)
FS
the user's board design.
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
C, L = 0.3 mH, I
AS
= 39 A, V
Parameter
DD
a)
= 54 V, V
50 °C/W when mounted on a
1 in
2
T
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
pad of 2 oz copper
= 25 °C unless otherwise noted
GS
= 10 V.
V
I
V
V
V
V
V
V
I
I
I
I
V
V
V
f = 1 MHz
V
V
V
V
D
F
F
D
D
GS
GS
GS
GS
DS
GS
GS
DS
GS
DS
DD
GS
GS
GS
= 250 μA, referenced to 25 °C
= 20 A, di/dt = 100 A/μs
= 20 A, di/dt = 300 A/μs
= 250 μA, V
= 250 μA, referenced to 25 °C
= V
= 10 V, I
= 8 V, I
= 10 V, I
= 10 V, I
= 0 V, I
= 0 V, I
= 30 V, V
= 48 V, V
= ±20 V, V
= 30 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 8 V
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
D
= 18.5 A
= 2.1 A
= 20 A
GS
= 250 μA
GS
GEN
= 20 A
GS
= 20 A
= 20 A, T
= 20 A,
DS
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 20 A
J
= 30 V,
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
Min
60
2
b)
125 °C/W when mounted on a
minimum pad of 2 oz copper.
1413
4837
0.70
0.79
Typ
1.0
3.2
-11
2.7
3.1
3.8
7.2
50
55
41
44
76
73
28
16
32
65
53
23
12
28
6435
1880
±100
Max
122
θCA
3.4
4.1
4.8
1.2
1.3
66
90
45
29
52
15
90
75
88
70
www.fairchildsemi.com
4
1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
Ω
V
S
V
V