SFU9214TU Fairchild Semiconductor, SFU9214TU Datasheet

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SFU9214TU

Manufacturer Part Number
SFU9214TU
Description
MOSFET P-CH/250V/1.53A/4OHM
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SFU9214TU

Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 1.53 A
Resistance Drain-source Rds (on)
4 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
IPAK
Fall Time
11 ns
Forward Transconductance Gfs (max / Min)
1 S
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
18 ns
Factory Pack Quantity
70
Typical Turn-off Delay Time
24 ns
Part # Aliases
SFU9214TU_NL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SFU9214TU
Manufacturer:
FSC
Quantity:
10 080
2001 Fairchild Semiconductor Corporation
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
*
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ V
Lower R
Symbol
J
dv/dt
R
R
R
V
V
E
E
I
I
P
, T
I
T
DM
AR
DSS
D
GS
AR
AS
JC
JA
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
: 3.15
(Typ.)
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
A
C
=25
=25
C
C
=25
=100
*
o
o
DS
C)
C)
o
C)
o
= -250V
*
C)
O
O
O
O
O
2
1
1
1
3
Typ.
--
--
--
- 55 to +150
-1.53
-0.97
-1.53
-250
0.15
SFR/U9214
Value
-6.1
110
-4.8
300
+ _
1.9
2.5
19
1
BV
R
I
1. Gate 2. Drain 3. Source
D
30
3
D-PAK
DS(on)
= -1.53 A
DSS
Max.
6.58
110
50
= 4.0
2
= -250 V
1
2
3
I-PAK
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
W
W
V
A
A
V
A
C
Rev. B1
o
C

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SFU9214TU Summary of contents

Page 1

... Purposes, 1/8" from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Junction-to-Ambient JA R Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount). 2001 Fairchild Semiconductor Corporation SFR/U9214 BV R DS(on D-PAK = -250V Gate 2. Drain 3. Source Value -250 ...

Page 2

SFR/U9214 Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...

Page 3

P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS Top : -15 V -10 V -8.0 V -7 -5.0 V Bottom : -4 Notes : 1. 250 s Pulse ...

Page 4

SFR/U9214 Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 @ Notes : 0 0.8 -75 -50 - 100 T , Junction Temperature J Fig 9. Max. Safe Operating Area O p ...

Page 5

P-CHANNEL POWER MOSFET “ Current Regulator ” 50K 12V 200nF 300nF V GS -3mA R 1 Current Sampling (I Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out DUT -10V Fig 14. Unclamped Inductive ...

Page 6

SFR/U9214 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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