NDS9435A_Q Fairchild Semiconductor, NDS9435A_Q Datasheet
NDS9435A_Q
Manufacturer Part Number
NDS9435A_Q
Description
MOSFET -30V -5.3A P-CH
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDS9435A_Q.pdf
(5 pages)
Specifications of NDS9435A_Q
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
- 5.3 A
Resistance Drain-source Rds (on)
42 mOhms
Configuration
Single Quad Drain Triple Source
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
9 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
13 ns
Typical Turn-off Delay Time
14 ns
NDS9435A
30V P-Channel PowerTrench
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
• Power management
• Load switch
• Battery protection
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJA
θJC
, T
Device Marking
STG
NDS9435A
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
advanced
D
– Continuous
– Pulsed
D
NDS9435A
D
Device
Parameter
S
S
S
PowerTrench
S
S
S
G
G
MOSFET
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
• –5.3 A, –30 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
• High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
–55 to +175
12mm
R
R
Ratings
DS(ON)
DS(ON)
–5.3
–30
±25
–50
125
2.5
1.2
50
25
1
= 50 mΩ @ V
= 80 mΩ @ V
January 2002
4
3
2
1
GS
GS
NDS9435A Rev E(W)
2500 units
Quantity
= –10 V
= –4.5 V
Units
°C/W
°C/W
°C/W
°C
W
V
V
A
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NDS9435A_Q Summary of contents
Page 1
... Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device NDS9435A NDS9435A 2002 Fairchild Semiconductor Corporation MOSFET Features • –5.3 A, –30 V PowerTrench • Low gate charge • Fast switching speed • High performance trench technology for extremely ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
Page 3
Typical Characteristics -10V -6.0V GS -5.0V -4. DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -5. -10V GS 1.4 1.2 ...
Page 4
Typical Characteristics -5. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 10ms 100ms 1s 1 10s DC ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...