FDC6312P_Q Fairchild Semiconductor, FDC6312P_Q Datasheet
FDC6312P_Q
Manufacturer Part Number
FDC6312P_Q
Description
MOSFET SSOT-6 P-CH DUAL
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDC6312P_Q.pdf
(5 pages)
Specifications of FDC6312P_Q
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 2.3 A
Resistance Drain-source Rds (on)
0.115 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SSOT-6
Fall Time
13 ns
Forward Transconductance Gfs (max / Min)
5.3 S
Minimum Operating Temperature
- 55 C
Power Dissipation
0.96 W
Rise Time
13 ns
Typical Turn-off Delay Time
18 ns
FDC6312P
Dual P-Channel 1.8V PowerTrench Specified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Power management
Load switch
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
SuperSOT
.312
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D1
S1
TM
-6
D2
– Continuous
– Pulsed
FDC6312P
Device
G1
Parameter
S2
G2
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
–2.3 A, –20 V. R
High performance trench technology for extremely
SuperSOT
low R
smaller than standard SO-8); low profile (1mm thick)
DS(ON)
TM
4
5
6
-6 package: small footprint (72%
Tape width
R
R
DS(ON)
DS(ON)
DS(ON)
12mm
-55 to +150
Ratings
–2.3
0.96
–20
130
0.9
0.7
–7
60
= 115 m @ V
= 155 m @ V
= 225 m @ V
8
January 2001
3
2
1
GS
GS
GS
FDC6312P Rev C (W)
3000 units
= –4.5 V
= –2.5 V
= –1.8 V
Quantity
Units
C/W
C/W
W
V
V
A
C
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FDC6312P_Q Summary of contents
Page 1
... FDC6312P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Applications Power management ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
Page 3
Typical Characteristics -4.5V GS -3.0V 5 -3.5V -2.5V 4 -2.0V 3 -1. 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -2. =-4.5V GS ...
Page 4
Typical Characteristics -2. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 10 R LIMIT DS(ON) 100ms 1s 1 10s -4.5V ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...