NDS9435A_D84Z Fairchild Semiconductor, NDS9435A_D84Z Datasheet - Page 4

• Manufacturer Part Number: NDS9435A_D84Z
• Description: MOSFET P-Ch PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9435A_D84Z

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 5.3 A
• Resistance Drain-source Rds (on): 0.05 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 9 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 14 ns

Typical Characteristics
0.01
10
100
0.1
8
6
4
2
0
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.1
0.001
I
0.01
D
R
SINGLE PULSE
R
0.1
= -5.3A
DS(ON)
θ JA
0.0001
V
1
T
GS
A
= 125
= 25
= -10V
LIMIT
D = 0.5
2
o
o
0.2
C
0.1
C/W
0.05
0.02
-V
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
SINGLE PULSE
4
0.001
DC
10s
1s
Figure 11. Transient Thermal Response Curve.
100ms
6
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10ms
V
DS
10
= -5V
1ms
0.01
100 µ s
8
-15V
-10V
100
10
0.1
t
1
, TIME (sec)
800
700
600
500
400
300
200
100
50
40
30
20
10
0
0
0.001
0
Figure 8. Capacitance Characteristics.
C
Figure 10. Single Pulse Maximum
RSS
1
0.01
5
C
-V
OSS
DS
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
C
t
1
10
ISS
, TIME (sec)
15
1
Duty Cycle, D = t
P(pk)
T
R
10
20
J
R
θJA
- T
θJA
(t) = r(t) + R
100
A
SINGLE PULSE
R
= 125
= P * R
θ JA
t
1
T
t
A
100
2
NDS9435A Rev E(W)
= 125°C/W
25
= 25°C
o
C/W
f = 1 MHz
V
θJA
GS
1
θJA
= 0 V
(t)
/ t
2
1000
30
1000