IRF650B_FP001 Fairchild Semiconductor
IRF650B_FP001
Manufacturer Part Number
IRF650B_FP001
Description
MOSFET
Manufacturer
Fairchild Semiconductor
Specifications of IRF650B_FP001
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
28 A
Resistance Drain-source Rds (on)
0.071 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220
Fall Time
195 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
156 W
Rise Time
240 ns
Typical Turn-off Delay Time
295 ns
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