MT48LC2M32B2P-5:G Micron Technology Inc, MT48LC2M32B2P-5:G Datasheet - Page 26

• Manufacturer Part Number: MT48LC2M32B2P-5:G
• Description: IC SDRAM 64MBIT 200MHZ 86TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC2M32B2P-5:G

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOP
• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 4.5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 280mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Package: 86TSOP-II
• Address Bus Width: 13 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 4.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 13:
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5
64MSDRAMx32_2.fm - Rev. J 12/08 EN
READ-to-WRITE With Extra Clock Cycle
Note:
COMMAND
A fixed-length READ burst may be followed by, or truncated with, a PRECHARGE
command to the same bank (provided that auto precharge was not activated), and a full-
page burst may be truncated with a PRECHARGE command to the same bank. The
PRECHARGE command should be issued x cycles before the clock edge at which the last
desired data element is valid, where x equals CL - 1. This is shown in Figure 14 on
page 27 for each possible CAS latency; data element n + 3 is either the last of a burst of
four or the last desired of a longer burst. Following the PRECHARGE command, a subse-
quent command to the same bank cannot be issued until
the row precharge time is hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to completion, a PRECHARGE
command issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvan-
tage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts.
Full-page READ bursts can be truncated with the BURST TERMINATE command, and
fixed-length READ bursts may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The BURST TERMINATE command
should be issued x cycles before the clock edge at which the last desired data element is
valid, where x equals CL - 1. This is shown in Figure 15 on page 28 for each possible CAS
latency; data element n + 3 is the last desired data element of a longer burst.
ADDRESS
CL = 3 is used for illustration. The READ command may be to any bank, and the WRITE
command may be to any bank.
DQM
CLK
DQ
BANK,
COL n
T0
READ
T1
NOP
26
T2
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3
NOP
t HZ
D
OUT
n
T4
NOP
DON’T CARE
T5
BANK,
COL b
WRITE
t
RP is met. Note that part of
D
IN
b
t
DS
©2001 Micron Technology, Inc. All rights reserved.
64Mb: x32 SDRAM
Commands