MMBF5459_Q Fairchild Semiconductor, MMBF5459_Q Datasheet

MMBF5459_Q

Manufacturer Part Number

MMBF5459_Q

Description

JFET N-Channel Transistor General Purpose

Manufacturer

Fairchild Semiconductor

Datasheet

1.MMBF5459_Q.pdf (5 pages)

Specifications of MMBF5459_Q

Transistor Polarity

N-Channel

Gate-source Breakdown Voltage

- 25 V

Continuous Drain Current

9 mA

Configuration

Single

Mounting Style

SMD/SMT

Package / Case

SOT-23-3

Power Dissipation

350 mW

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1997 Fairchild Semiconductor Corporation

Symbol

, T

N-Channel General Purpose Amplifier

This device is a low level audio amplifier and switching transistors,

and can be used for analog switching applications. Sourced from

Process 55.

Absolute Maximum Ratings*

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

stg

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Operating and Storage Junction Temperature Range

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Derate above 25 C

2N5457

2N5458

2N5459

Characteristic

TO-92

Parameter

TA = 25°C unless otherwise noted

2N5457-5459

Mark: 6D / 61S / 6L

625

125

357

5.0

MMBF5457

MMBF5458

MMBF5459

SOT-23

Max

*MMBF5457-5459

-55 to +150

Value

- 25

350

556

2.8

NOTE: Source & Drain

are interchangeable

Units

mW/ C

Units

C/W

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