PBSS302PD T/R

Manufacturer Part NumberPBSS302PD T/R
DescriptionTransistors Bipolar - BJT PNP 40V 4A LOW SAT
ManufacturerNXP Semiconductors
PBSS302PD T/R datasheet
 


Specifications of PBSS302PD T/R

Product CategoryTransistors Bipolar - BJTRohsyes
ConfigurationSingleTransistor PolarityPNP
Collector- Base Voltage Vcbo40 VCollector- Emitter Voltage Vceo Max40 V
Emitter- Base Voltage Vebo5 VCollector-emitter Saturation Voltage5 V
Gain Bandwidth Product Ft110 MHzDc Collector/base Gain Hfe Min200 at 0.5 A at 2 V
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Package / CaseTSOPContinuous Collector Current4 A
Maximum Power Dissipation2500 mWMinimum Operating Temperature- 65 C
Factory Pack Quantity3000Part # AliasesPBSS302PD,115
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NXP Semiconductors
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
Device mounted on a ceramic PCB, Al
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
[5]
Operated under pulsed conditions: duty cycle
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, mounting pad for collector 1 cm
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
PBSS302PD_2
Product data sheet
Limiting values
…continued
Parameter
Conditions
junction temperature
ambient temperature
storage temperature
O
, standard footprint.
2
3
1600
P
tot
(mW)
1200
(1)
800
(2)
(3)
(4)
400
0
75
25
25
O
, standard footprint
2
3
Rev. 02 — 6 December 2007
PBSS302PD
40 V, 4 A PNP low V
(BISS) transistor
CEsat
Min
Max
-
150
65
+150
65
+150
10 % and pulse width t
10 ms.
p
006aaa270
75
125
175
T
( C)
amb
2
2
© NXP B.V. 2007. All rights reserved.
Unit
C
C
C
2
.
2
.
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