BC557CBU Fairchild Semiconductor, BC557CBU Datasheet - Page 2

• Manufacturer Part Number: BC557CBU
• Description: Transistors Bipolar - BJT TO-92 PNP GP AMP
• Manufacturer: Fairchild Semiconductor

Specifications of BC557CBU

• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 150 MHz
• Dc Collector/base Gain Hfe Min: 420 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Maximum Power Dissipation: 500 mW

© 2012 Fairchild Semiconductor Corporation
BC556/557/558/559/560 Rev. B0
Typical Performance Characteristics
Figure 3. Base-Emitter Saturation Voltage
Figure 5. Collector Output Capacitance
-0.01
-50
-45
-40
-35
-30
-25
-20
-15
-10
-0.1
Collector-Emitter Saturation Voltage
-10
10
-5
-0
-1
1
-0.1
-1
Figure 1. Static Characteristic
I
-2
C
= -10 I
V
V
CB
-4
CE
[V], COLLECTOR-BASE VOLTAGE
I
[V], COLLECTOR-EMITTER VOLTAGE
B
C
V
[mA], COLLECTOR CURRENT
CE
V
(sat)
-6
BE
(sat)
-1
-10
-8
I
B
-10
= -400
I
B
= -350
-12

A
I
B
= -300
-10

-14
I
A
B
= -250
f=1MHz
I
E

I
A
-16
= 0
-100
B
I
I
B
= -200
B
I
B
= -150

= -100
= -50
A
-18



A

A
A
A
-20
-100
2
Figure 6. Current Gain Bandwidth Product
1000
1000
-100
100
100
-0.1
-10
10
10
-1
1
Figure 4. Base-Emitter On Voltage
-0.1
Figure 2. DC current Gain
V
V
V
CE
CE
CE
-0.2
= -5V
= -5V
= -5V
-1
I
I
C
C
V
[mA], COLLECTOR CURRENT
[mA], COLLECTOR CURRENT
BE
[V], BASE-EMITTER VOLTAGE
-0.4
-1
-0.6
-0.8
-10
-10
-1.0
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-100
-1.2