MT45W1MW16BAFB-856 WT Micron Technology Inc, MT45W1MW16BAFB-856 WT Datasheet - Page 31
MT45W1MW16BAFB-856 WT
Manufacturer Part Number
MT45W1MW16BAFB-856 WT
Description
IC PSRAM 16MBIT 85NS 54FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W1MW16BABB-706_WT_TR.pdf
(60 pages)
Specifications of MT45W1MW16BAFB-856 WT
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
16M (1M x 16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Figure 24:
Table 13:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Description
Deep Power-Down
60
55
50
45
40
35
30
25
-30
-20
Deep Power-Down Specifications
Typical Refresh Current vs. Temperature (I
-10
0
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
10
Temperature (°C)
V
IN
20
= V
Conditions
CC
30
Q or 0V; +25°C
40
31
50
TCR
Maximum and Typical Standby Currents
60
) – 16Mb
Micron Technology, Inc., reserves the right to change products or specifications without notice.
70
Symbol
I
ZZ
80
90
©2003 Micron Technology, Inc. All rights reserved.
Typ
PAR = Full Array
PAR = 1/2, 1/4, 1/8 Array
None
10
Units
µA
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