MT46H8M32LFB5-10 IT:A TR Micron Technology Inc, MT46H8M32LFB5-10 IT:A TR Datasheet - Page 40

• Manufacturer Part Number: MT46H8M32LFB5-10 IT:A TR
• Description: IC DDR SDRAM 256MBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M32LFB5-10 IT:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 25:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Address
Random WRITE Cycles
DQS
CK#
DM
DQ
CK
Notes:
WRITE
Bank,
Col b
T0
1. D
2. b' (or x', n', a', g') = the next data-in following D
3. Programmed BL = 2, 4, or 8 in cases shown.
4. Each WRITE command may be to any bank.
t
DQSS (NOM)
grammed burst order.
IN
b (or x, n, a, g) = data-in for column b (or x, n, a, g).
WRITE
Bank,
Col x
D
T1
b
IN
T1n
D
b'
IN
WRITE
Bank,
Col n
T2
D
x
IN
40
T2n
D
x'
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
Bank,
Col a
T3
D
256Mb: x16, x32 Mobile DDR SDRAM
n
IN
Transitioning data
T3n
D
n'
IN
IN
b (x, n, a, g), according to the pro-
WRITE
Bank,
Col g
T4
D
a
IN
T4n
D
a'
IN
©2005 Micron Technology, Inc. All rights reserved.
T5
D
NOP
Don’t Care
g
IN
T5n
D
Operations
g'
IN