NAND512W3A2BN6F STMicroelectronics, NAND512W3A2BN6F Datasheet - Page 32

• Manufacturer Part Number: NAND512W3A2BN6F
• Description: IC FLASH 512MBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND512W3A2BN6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

NAND128-A, NAND256-A, NAND512-A, NAND01G-A
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in
ble 14.
Table 14. Program, Erase Times and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in
ble 15., Absolute Maximum
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
Table 15. Absolute Maximum Ratings
Note: 1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may over-
32/56
Page Program Time
Block Erase Time
Program/Erase Cycles (per block)
Data Retention
Symbol
V
T
T
V
shoot to V
IO
BIAS
STG
DD
(1)
DD
Parameters
+ 2V for less than 20ns during transitions on I/O pins.
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Ratings, may cause
Parameter
Ta-
Ta-
100,000
1.8V devices
1.8V devices
3 V devices
3 V devices
Min
10
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
STMicroelectronics SURE Program and other rel-
evant quality documents.
NAND Flash
reliability.
Typ
200
2
– 0.6
– 0.6
– 0.6
– 0.6
– 50
– 65
Min
Value
Refer
Max
500
3
Max
125
150
2.7
4.6
2.7
4.6
also
cycles
to
years
Unit
ms
µs
Unit
°C
°C
V
V
V
V
the