NAND512W3A2BN6F STMicroelectronics, NAND512W3A2BN6F Datasheet - Page 45

• Manufacturer Part Number: NAND512W3A2BN6F
• Description: IC FLASH 512MBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND512W3A2BN6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Ready/Busy Signal Electrical Characteristics
Figures 37,
teristics for the Ready/Busy signal. The value re-
quired for the resistor R
the following equation:
So,
where I
devices tied to the Ready/Busy signal. R
determined by the maximum value of t
Figure 36. Ready/Busy AC Waveform
Figure 38. Resistor Value Versus Waveform Timings For Ready/Busy Signal
Note: T = 25°C.
R P min
ready V DD
400
300
200
100
R P min 1,8V
L
0
R P min 3V
is the sum of the input currents of all the
1
1.7
30
1.7
36
=
t f
----------------------------------------------------------- -
and
V DDmax V OLmax
V OL
V DD = 1.8V, C L = 30pF
38
2
=
0.85
60
1.7
I OL
=
show the electrical charac-
busy
P
---------------------------
8mA
R P (K
---------------------------
3mA
can be calculated using
–
+
3,2V
1,85V
+
I L
+
3
1.7
0.57
I L
90
I L
t r
r
.
V OH
t f
P
AI07564B
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
max is
4
1.7
0.43
120
2
1
3
4
t r
Figure 37. Ready/Busy Load Circuit
400
300
200
100
0
1
100
3.6
2.4
DEVICE
V SS
V DD
ibusy
V DD = 3.3V, C L = 100pF
2
200
3.6
1.2
R P (K
R P
Open Drain Output
3
RB
300
3.6
0.8
400
ibusy
4
3.6
3
2
1
0.6
4
ai07565B
AI07563B
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