NAND512W3A2BN6F STMicroelectronics, NAND512W3A2BN6F Datasheet - Page 34

• Manufacturer Part Number: NAND512W3A2BN6F
• Description: IC FLASH 512MBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND512W3A2BN6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Table 18. DC Characteristics, 1.8V Devices
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Symbol
I
OL
V
I
I
I
I
V
V
V
DD1
DD2
DD3
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
512Mb and 1Gb Dual Die devices
128Mb, 256Mb, 512Mb devices
V
DD
Stand-By Current (CMOS)
Stand-By Current (CMOS)
Output High Voltage Level
Output Low Voltage Level
Operating
Output Low Current (RB)
Output Leakage Current
Current
Input Leakage Current
Supply Voltage (Erase and
Input High Voltage
Input Low Voltage
Program lockout)
Parameter
Sequential
Program
Erase
Read
V
E=V
V
Test Conditions
OUT
IN
t
RLRL
I
I
OH
E=V
= 0 to V
WP=0/V
OL
V
IL,
= 0 to V
OL
I
= -100µA
= 100µA
OUT
minimum
DD
= 0.1V
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
max
V
V
DD
DD
Min
-0.3
3
-
-
-
-
-
-
-
-
-
-0.4
-0.1
Typ
10
20
8
8
8
4
-
-
-
-
-
-
-
V
DD
Max
100
±10
±10
0.4
0.1
1.5
15
15
15
50
-
+0.3
Unit
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V