NAND512W3A2BN6F STMicroelectronics, NAND512W3A2BN6F Datasheet - Page 36

• Manufacturer Part Number: NAND512W3A2BN6F
• Description: IC FLASH 512MBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND512W3A2BN6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Table 20. AC Characteristics for Command, Address, Data Input
Note: 1. If t
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Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
WHALH
WHCLH
t
ALHWL
CLHWL
WHALL
WHCLL
ALLWL
CLLWL
t
WHWL
WLWH
DVWH
WHDX
WHEH
WLWL
ELWL
ELWL
Symbol
t
t
t
t
Alt.
t
t
t
t
t
CLS
t
t
ALH
CLH
ALS
WH
WC
WP
DS
CS
DH
CH
is less than 10ns, t
Address Latch Low to Write Enable Low
Address Latch High to Write Enable Low
Command Latch High to Write Enable Low
Command Latch Low to Write Enable Low
Data Valid to Write Enable High
Chip Enable Low to Write Enable Low
Write Enable High to Address Latch High
Write Enable High to Address Latch Low
Write Enable High to Command Latch High
Write Enable High to Command Latch Low
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
WLWH
must be minimum 35ns, otherwise, t
Parameter
AL Setup time
CL Setup time
Data Setup time
E Setup time
AL Hold time
CL hold time
Data Hold time
E Hold time
W High Hold
time
W Pulse Width
Write Cycle time
WLWH
may be minimum 25ns.
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Devices
1.8V
20
10
10
10
10
20
40
60
0
0
0
Devices
25
3V
20
10
10
10
10
15
50
0
0
0
(1)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns