NAND512W3A2BN6F STMicroelectronics, NAND512W3A2BN6F Datasheet - Page 37

• Manufacturer Part Number: NAND512W3A2BN6F
• Description: IC FLASH 512MBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND512W3A2BN6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Table 21. AC Characteristics for Operations
Note: 1. The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See Figures 36,
Symbol
t
t
t
t
t
t
t
t
t
ALLRL1
ALLRL2
WHBH1
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
BLBH1
BLBH2
BLBH3
BLBH4
CLLRL
WHBH
WHRL
WLWL
EHBH
EHQZ
RHQZ
WHBL
BHRL
ELQV
RHBL
RHRL
RLRH
RLQV
DZRL
EHEL
RLRL
2. To break the sequential read cycle, E must be held High for longer than t
3. ES = Electronic Signature.
Symbol
t
t
t
PROG
BERS
t
t
t
t
t
t
t
t
t
WHR
Alt.
t
t
t
t
CRY
CEH
t
REH
t
t
RST
CLR
CHZ
CEA
RHZ
REA
t
WC
WB
AR
RR
RB
RP
RC
t
IR
R
Address Latch Low to
Read Enable Low
Ready/Busy High to Read Enable Low
Ready/Busy Low to
Ready/Busy High
Write Enable High to
Ready/Busy High
Command Latch Low to Read Enable Low
Data Hi-Z to Read Enable Low
Chip Enable High to Ready/Busy High (E intercepted read)
Chip Enable High to Chip Enable Low
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Read Enable High to Ready/Busy Low
Read Enable High to
Read Enable Low
Read Enable High to Output Hi-Z
Read Enable Low to
Read Enable High
Read Enable Low to
Read Enable Low
Read Enable Low to
Output Valid
Write Enable High to
Ready/Busy High
Write Enable High to Ready/Busy Low
Write Enable High to Read Enable Low
Write Enable Low to
Write Enable Low
Read Electronic Signature
Read cycle
Read Busy time, 128Mb, 256Mb,
512Mb Dual Die
Read Busy time, 512Mb, 1Gb
Program Busy time
Erase Busy time
Reset Busy time, during ready
Reset Busy time, during read
Reset Busy time, during program
Reset Busy time, during erase
Read Enable High Hold time
Read Enable Pulse Width
Read Cycle time
Read Enable Access time
Read ES Access time
Read Busy time, 128Mb, 256Mb,
512Mb Dual Die
Read Busy time, 512Mb, 1Gb
Write Cycle time
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Parameter
(2)
(3)
EHEL
.
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Devices
60 + t
1.8V
500
500
100
100
100
10
10
20
10
15
10
10
20
45
15
15
30
30
60
35
10
15
80
60
3
5
5
0
r
(1)
37
Devices
60 + t
and 38.
500
500
100
100
100
3V
10
10
20
10
12
10
10
20
45
15
15
30
30
50
35
10
12
60
50
3
5
5
0
r
(1)
37/56
Unit
ms
ns
ns
ns
µs
µs
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns