TC58FVM6T5BTG65 Toshiba, TC58FVM6T5BTG65 Datasheet - Page 21

• Manufacturer Part Number: TC58FVM6T5BTG65
• Description: IC FLASH 64MBIT 65NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58FVM6T5BTG65

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 65ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

10.20. CFI (Common Flash memory Interface)
followed by the address. In Word Mode DQ8~DQ15 all output 0s. To exit this mode, input the Reset command.
CFI CODE TABLE 1 (Continue)
The TC58FVM6(T/B)5B conforms to the CFI specifications. To read information from the device, input the Query command
ADDRESS A6~A0
1Ah
1Bh
1Ch
1Dh
1Eh
1Fh
2Ah
2Bh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
DATA DQ15~DQ0
0023h
0000h
000Ah
0005h
0006h
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0036h
0000h
0004h
0000h
0000h
0004h
0000h
0017h
0001h
0000h
0004h
0000h
ASCII string “QRY”
Primary OEM command set
Address for primary extended table
Alternate OEM command set
Address for alternate OEM extended table
V
V
V
V
Typical time-out per single word write (2
Typical time-out for minimum size buffer write (2
Typical time-out per individual block erase (2
Typical time-out for full chip erase (2
Maximum time-out for word write (2
Maximum time-out for buffer write (2
Maximum time-out per individual block erase (2
Maximum time-out for full chip erase (2
Device Size (2
Flash device interface description
Maximum number of bytes in multi-byte write (2
DD
DD
PP
PP
2: AMD/FJ standard type
0: none exists
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
1: x 16
(min) voltage
(max) voltage
(min) (Write/Erase)
(max) (Write/Erase)
N
byte) 17h:64Mbit
DESCRIPTION
TC58FVM6(T/B)5B(TG/XG)65
N
N
N
times typical)
ms)
times typical)
N
N
times typical)
μ s)
N
ms)
N
N
N
)
times typical)
μ s)
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