TC58FVM6T5BTG65 Toshiba, TC58FVM6T5BTG65 Datasheet - Page 28

• Manufacturer Part Number: TC58FVM6T5BTG65
• Description: IC FLASH 64MBIT 65NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58FVM6T5BTG65

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 65ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

15. DC CHARACTERISTICS
16. AC TEST CONDITIONS
(1)
(2)
I
I
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
Input Pulse Level
Input Pulse Rise and Fall Time (10%~90%)
Timing Measurement Reference Level (input)
Timing Measurement Reference Level (output)
Output Load
LI
LO
DDO1
DDO2
DDO3
DDO4
DDO5
DDO6
DDO7
DDO8
DDS1
DDS2
ID
ACC
OH
OL
LKO
SYMBOL
The device enters Automatic Sleep Mode in which the address remains fixed for during 150 ns.
(I
DDO1+
I
DDO7
× 7) ／ 8words
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
V
V
V
V
Current
V
Current
V
Erase-Suspend Current
V
V
Read Current
VDD Standby Current
V
(Automatic Sleep Mode
High-Voltage Input Current for
A9, OE and RESET
High-Voltage
Low-V
WP
DD
DD
DD
DD
DD
DD
DD
DD
DD
/ACC
Standby Current
Average Random Read Current
Average Program Current
Average Erase Current
Average Read-While-Program
Average Read-while-Erase
Average Program-while-
Average Page Read Current
Average Address Increment
DD
PARAMETER
Lock-out Voltage
PARAMETER
(2)
Input
(1)
Current
)
for
0 V ≦ V
0 V ≦ V
I
I
I
V
t
V
V
V
t
V
t
V
V
t
V
V
V
11.4 V ≦ V
8.5V ≦ V
WP
OH
OH
OL
RC
RC
RC
PRC
t
t
IN
IN
IN
IN
IN
IN
IN
IN
IH
IL
RC
PRC
= V
= 4. 0 mA
= V
= 100ns
= V
= V
= V
= 100ns
= V
= 100ns
= V
= V
= V
= V
= − 0.1 mA
= − 2.5 mA
/ACC
or RESET = V
CE = RESET = V
=100ns
= 25ns
= 25ns
SS
IH
IH
IH
IH
IH
IH
IH
IH
DD
IN
OUT
/V
/V
/V
/V
/V
/V
/V
/V
CONDITION
= V
ACC
IL
IL
IL
IL
IL
IL
IL
IL
ID
≦ V
, I
, I
, I
, I
, I
, I
, I
, I
DD
C
≦ V
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
⎯
≦ 12.6 V
≦ 12.6 V
L
and
DD
(100 pF) + 1 TTL Gate / C
DD
= 0 mA
= 0 mA
= 0 mA
= 0 mA
= 0 mA
= 0 mA
= 0 mA
= 0 mA
SS
DD
TC58FVM6(T/B)5B(TG/XG)65
0.85 x V
V DD /2, V DD /2
V DD /2, V DD /2
V
CONDITION
V
DD
DD
MIN
1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5 ns
− 0.4
, 0.0 V
DD
L
(30 pF) + 1 TTL Gate
TYP
37
11
48
46
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9
2
5
3
3
2006-05-10 28/80
MAX
0.4
2.0
± 1
± 1
55
15
15
70
70
15
10
10
35
20
⎯
⎯
11
5
UNIT
mA
mA
μ A
μ A
V
V