TC58FVM6T5BTG65 Toshiba, TC58FVM6T5BTG65 Datasheet - Page 24

• Manufacturer Part Number: TC58FVM6T5BTG65
• Description: IC FLASH 64MBIT 65NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58FVM6T5BTG65

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 65ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

operation. The output data is read out using the same timing as that used when CE = OE = V
output can be either High or Low.
Sequence flag is read to determine the device status and the result of the operation is verified by comparing the read-out data with
the original data.
The TC58FVM6(T/B)5B has a Hardware Sequence flag which allows the device status to be determined during an auto mode
The device re-enters Read Mode automatically after an auto mode operation has been completed successfully. The Hardware
10.21. HARDWARE SEQUENCE FLAGS
Notes:DQ outputs cell data and
data during the programming operation and outputs actual data after programming has finished. In an auto-erase operation,
DQ7 outputs 0 during the Erase operation and outputs 1 when the Erase operation has finished. If an Auto-Program or
auto-erase operation fails, DQ7 simply outputs the data.
When the operation has finished, the address latch is reset. Data polling is asynchronous with the OE signal.
bit begins toggling on the rising edge of WE in the last bus cycle. DQ6 alternately outputs a 0 or a 1 for each OE access
while CE = V
cell data can be read by subsequent reading. If the operation fails, the DQ6 output toggles.
If an attempt is made to execute an Auto Program operation on a protected block, DQ6 will toggle for around 3 μ s. It will then
stop toggling. If an attempt is made to execute an auto erase operation on a protected block, DQ6 will toggle for around 400 μ s.
It will then stop toggling. After toggling has stopped the device will return to Read Mode.
DATA polling begins on the rising edge of WE in the last bus cycle. In an Auto-Program operation, DQ7 outputs inverted
10.21.2. DQ6 (Toggle bit 1)
10.21.1. DQ7 (
In Progress
Time Limit
During an Auto-Program or auto-erase operation, the device status can be determined using the data polling function.
The device status can be determined by the Toggle Bit function during an Auto-Program or auto-erase operation. The Toggle
Exceeded
(1)
(2)
(3)
(4)
DQ0 and DQ1 pins are reserved for future use. 0 is output on DQ0, DQ1 and DQ4.
During Auto Chip Erase, all blocks are selected.
Data output from an address to which Write is being performed is undefined.
Output when the block address selected for Auto Block Erase is specified and data is read from there.
Output when a block address not selected for Auto Block Erase of same bank as selected block is specified and data is read from there.
In case of Page program operation is program data of (A0, A1, A2) = (1, 1, 1) in eleventh bus write cycle.
Auto Programming/Auto Page Programming
Read in Program Suspend
Auto Programming/Auto Page Programming
Auto Erase
Programming in Erase Suspend
IL
DATA
Suspend
In Erase
In Auto
Erase
while the device is busy. When the internal operation has been completed, toggling stops and valid memory
polling)
STATUS
Erase Hold Time
RY
Programming
Auto Erase
/
Read
BY
goes High-Impedence when the operation has been completed.
(1)
Not-selected
Not-selected
Not-selected
Not-selected
Selected
Selected
Selected
Selected
(2)
(3)
DQ
DQ
DQ7
Data
Data
DQ
DQ
DQ
0
0
0
0
1
0
7
7
7
7
7
(4)
(4)
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Data
Data
DQ6
1
TC58FVM6(T/B)5B(TG/XG)65
Data
Data
DQ5
0
0
0
0
0
0
0
0
1
1
1
Data
DQ3
Data
0
0
0
1
1
0
0
0
0
1
0
IL
Toggle
Toggle
Toggle
Toggle
DQ2
Data
Data
N/A
N/A
in Read Mode. The
1
1
1
1
1
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RY
High-Z
High-Z
High-Z
/
0
0
0
0
0
0
0
0
0
0
BY
RY
/
BY