TC58FVM6T5BTG65 Toshiba, TC58FVM6T5BTG65 Datasheet - Page 22

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TC58FVM6T5BTG65

Manufacturer Part Number
TC58FVM6T5BTG65
Description
IC FLASH 64MBIT 65NS 48TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TC58FVM6T5BTG65

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
65ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC58FVM6T5BTG65
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
CFI CODE TABLE 2(Sequel)
ADDRESS A6~A0
2Ch
2Dh
2Eh
4Ah
4Bh
4Ch
4Dh
4Eh
2Fh
30h
31h
32h
33h
34h
40h
41h
42h
43h
44h
45h
46h
47h
48h
49h
4Fh
50h
DATA DQ15~DQ0
00FEh
00C6h
0000h
0001h
0001h
0000h
0001h
0002h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0050h
0052h
0049h
0031h
0031h
0002h
0001h
0007h
0001h
0085h
000xh
Number of erase block regions within device
Erase Block Region 1 information
Erase Block Region 2 information
ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
Address-Sensitive Unlock
Erase Suspend
Block Protect
Block Temporary Unprotect
Block Protect/Unprotect scheme
Simultaneous operation
Burst Mode
Page Mode
V
V
Top/Bottom Boot Block Flag
Program Suspend
ACC
ACC
Bits 0~15: y = block number
Bits 16~31: z = block size
(z × 256 bytes)
0: Required
1: Not required
0: Not supported
1: For Read-only
2: For Read & Write
0: Not supported
X: Number of blocks per group
0: Not supported
1: Supported
0: Not supported
1: Supported
0: Not supported
0: Not supported
1: Supported
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
X = 2: Bottom Boot Block: TC58FVM6B5B
X = 3: Top Boot Block:
0: Not supported
1: Supported
(min) voltage
(max) voltage
DESCRIPTION
TC58FVM6T5B
TC58FVM6(T/B)5B(TG/XG)65
2006-05-10 22/80

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