TC58FVM6T5BTG65 Toshiba, TC58FVM6T5BTG65 Datasheet - Page 26

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TC58FVM6T5BTG65

Manufacturer Part Number
TC58FVM6T5BTG65
Description
IC FLASH 64MBIT 65NS 48TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TC58FVM6T5BTG65

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
65ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC58FVM6T5BTG65
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
11. DATA PROTECTION
The TC58FVM6(T/B)5B includes a function which guards against malfunction or data corruption.
11.1. Protection against Program/Erase Caused by Low Supply Voltage
state, command input is ignored.
If V
operation is not executed again when V
execute Auto operation again.
When V
11.2. Protection against Malfunction Caused by Glitches
than 3 ns (Typ.) input on WE , CE or OE . However, if a glitch exceeding 3 ns (Typ.) occurs and the glitch is input to the
device malfunction write may occur.
The device uses standard JEDEC commands. It is conceivable that, in extreme cases, system noise may be misinterpreted as
part of a command sequence input and that the device will acknowledge it. Then, even if a proper command is input, the device
may not operate. To avoid this possibility, clear the Command Register before command input. In an environment prone to
system noise, Toshiba recommends input of a software or hardware reset before command input.
11.3. Protection against Malfunction at Power-on
does not latch the command on the first rising edge of WE or CE . Instead, the device automatically Resets the Command
Register and enters Read Mode.
To prevent malfunction at power-on or power-down, the device will not accept commands while V
To prevent malfunction write during operation caused by noise from the system, the device will not accept pulses shorter
To prevent damage to data caused by sudden noise at power-on, when power is turned on with WE = CE =V
DD
drops below V
DD
> V
LKO
, make up countermeasure to be input accurately command in system side please.
LKO
during an Auto Operation, the device will terminate Auto-Program execution. In this case, Auto
DD
returns to recommended V
DD
voltage. Therefore, command need to be input to
TC58FVM6(T/B)5B(TG/XG)65
DD
2006-05-10 26/80
is below V
IL
LKO
the device
. In this

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