MT8VDDT6464AG-335F3 Micron Technology Inc, MT8VDDT6464AG-335F3 Datasheet - Page 22

• Manufacturer Part Number: MT8VDDT6464AG-335F3
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464AG-335F3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

pdf: 09005aef80867ab3, source: 09005aef80867a99
DD8C16_32_64x64AG.fm - Rev. G 9/04 EN
43. Random addressing changing and 100 percent of
44. CKE must be active (high) during the entire time a
45. I
data changing at every transfer.
refresh command is executed. That is, from the
time the AUTO REFRESH command is registered,
CKE must be active at each rising clock edge, until
t
driven to a valid high or low logic level. I
similar to I
address and control inputs to remain stable.
Although I
I
RFC has been satisfied.
DD
DD
2N specifies the DQ, DQS, and DM to be
2F is “worst case.”
DD
DD
2F, I
2
F
DD
except I
2N, and I
DD
DD
2Q specifies the
2Q are similar,
DD
2Q is
22
46. Whenever the operating frequency is altered, not
47. Leakage number reflects the worst case leakage
48. When an input signal is HIGH or LOW, it is
49. The -335 speed grade will operate with
128MB, 256MB, 512MB (x64, SR)
including jitter, the DLL is required to be reset, fol-
lowed by 200 clock cycles before any READ com-
mand.
possible through the module pin, not what each
memory device contributes.
defined as a steady state logic HIGH or LOW.
= 40ns and
frequency.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
t
RAS (MAX) = 120,000ns at any slower
©2004 Micron Technology. Inc.
t
RAS (MIN)