MT8VDDT6464AG-335F3 Micron Technology Inc, MT8VDDT6464AG-335F3 Datasheet - Page 28

• Manufacturer Part Number: MT8VDDT6464AG-335F3
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464AG-335F3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 21: Serial Presence-Detect Matrix
“1”/”0”: Serial Data, “driven to HIGH”/”driven to LOW”;notes appear on page 28
NOTE:
pdf: 09005aef80867ab3, source: 09005aef80867a99
DD8C16_32_64x64AG.fm - Rev. G 9/04 EN
1. Value for -26A
2. The value of
3. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-case (slow slew rate) value
4. The value of
99-127 Manufacturer-Specific Data (RSVD)
48–61
BYTE
36-40
65-71
73-90
95-98
is represented here. Systems requiring the fast slew rate setup and hold values are supported, provided the faster
minimum slew rate is met.
SDRAM device specification is 15ns.
31
32
33
34
35
41
42
43
44
45
46
47
62
63
64
72
91
92
93
94
Module Rank Density
Address And Command Setup Time,
(See note 3)
Address And Command Hold Time,
(See note 3)
Data/data Mask Input Setup Time,
Data/Data Mask Input Hold Time,
Reserved
Minimum Active/ Auto Refresh Time,
t
Minimum Auto Refresh To Active/ Auto
Refresh Command Period,
Maximum Cycle Time,
Maximum DQS-DQ Skew Time,
Maximum Read Data Hold Skew Factor,
t
Reserved
DIMM Height
Reserved
SPD Revision
Checksum For Bytes 0-62
Manufacturer’s JEDEC ID Code
Manufacturer’s JEDEC ID Code (cont’d)
Manufacturing Location
Module Part Number (ASCII)
PCB Identification Code
Identification Code (continued)
Year of Manufacture In BCD
Week of Manufacture In BCD
Module Serial Number
RC
QHS
t
t
RAS for -26A and -265 modules is calculated from
RP,
t
CK set to 7ns (0x70) for optimum BIOS compatibility. Actual device spec. value is 7.5ns.
t
RCD and
DESCRIPTION
t
RAP for -335 modules indicated as 18ns to align with industry specifications; actual DDR
t
CK (MAX)
t
RFC
t
DQSQ
t
t
DH
DS
t
IH
t
IS
1.0ns (-262/-26A/-265)
1.0ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
Standard/Low-Profile
75ns (-262/-26A/-265)
13ns (-262/-26A/-265)
ENTRY(VERSION)
65ns (-26A/-265)
128MB, 256MB,
60ns (-335/-262)
0.45ns (-335)
0.45ns (-335)
0.45ns (-335)
0.55ns (-335)
0.8ns (-335)
0.8ns (-335)
(continued)
72ns (-335)
12ns (-335)
Release 1.0
MICRON
512MB
1 - 12
-26A
-335
-262
-265
0
28
128MB, 256MB, 512MB (x64, SR)
t
RC -
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
t
RP. Actual device spec. value is 40ns.
MT8VDDT1664A MT8VDDT3264A MT8VDDT6464A
Variable Data
Variable Data
Variable Data
Variable Data
Variable Data
01 - 0C
C4/D4
97/A7
01/11
04/14
F4/04
A0
A0
3C
4B
2D
2C
20
80
80
45
50
45
50
00
41
48
30
34
32
55
75
00
00
10
00
FF
–
Variable Data
Variable Data
Variable Data
Variable Data
Variable Data
01 - 0C
BA/CA
01/11
27/37
17/27
E7/F7
A0
A0
2D
40
80
80
45
50
45
50
00
3C
41
48
4B
30
34
32
55
75
00
00
10
2C
00
FF
–
©2004 Micron Technology. Inc.
Variable Data
Variable Data
Variable Data
Variable Data
Variable Data
01 - 0C
FB/0B
01/11
68/78
28/38
58/68
A0
A0
2D
80
80
80
45
50
45
50
00
3C
41
48
4B
30
34
32
55
75
00
00
10
2C
00
FF
–