MT18VDDF12872HY-335D1 Micron Technology Inc, MT18VDDF12872HY-335D1 Datasheet - Page 16

• Manufacturer Part Number: MT18VDDF12872HY-335D1
• Description: MODULE SDRAM DDR 512MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872HY-335D1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.53A
• Number Of Elements: 18
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 40; notes appear on pages 17–20; 0°C £ T
09005aef80e487d7
DDF18C64_128x72HG_A.fm - Rev. A 10/03 EN
AC CHARACTERISTICS
PARAMETER
Address and control input setup time (slow
slew rate)
Address and Control input pulse width (for
each input)
LOAD MODE REGISTER command cycle
time
DQ-DQS hold, DQS to first DQ to go non-
valid, per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge
command
ACTIVE to ACTIVE/AUTO REFRESH
command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b
command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (Continued)
DD
SYMBOL MIN
t
t
WPRES
t
t
t
t
t
t
t
WPRE
t
t
t
t
WPST
t
t
t
t
t
XSNR
XSRD
t
RPRE
MRD
RPST
t
WTR
REFC
t
QHS
RCD
RRD
REFI
VTD
IPW
RAS
RAP
t
t
t
RFC
NA
WR
QH
RC
RP
IS
S
t
t
0.25
QHS
HP -
200
0.8
2.2
0.9
0.4
0.4
12
42
18
60
72
18
18
12
15
75
t
0
1
0
QH -
16
-335
t
DQSQ
A
70,000
MAX
0.50
70.3
£ +65°C; V
1.1
0.6
0.6
7.8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
MIN
0.25
HP -
QHS
200
2.2
0.9
0.4
0.4
512MB, 1GB (x72, ECC, DR)
15
40
15
60
75
15
15
15
15
75
DD
t
1
0
1
0
QH -
= V
-262
t
DQSQ
120,000
DD
MAX
200-PIN DDR SODIMM
0.75
70.3
1.1
0.6
0.6
7.8
Q = +2.5V ±0.2V
t
t
MIN MAX
0.25
t
QHS
200
HP -
1.1
2.2
0.9
0.4
0.4
QH -
16
40 120,000
20
70
80
20
20
15
15
80
0
1
0
-202
t
DQSQ
70.3
1.1
0.6
0.6
7.8
1
UNITS
©2003 Micron Technology, Inc.
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
CK
CK
CK
CK
CK
CK
NOTES
22, 23
18, 19
12
31
43
37
17
22
21
21