MT18VDDF12872HY-335D1 Micron Technology Inc, MT18VDDF12872HY-335D1 Datasheet - Page 23

• Manufacturer Part Number: MT18VDDF12872HY-335D1
• Description: MODULE SDRAM DDR 512MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872HY-335D1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.53A
• Number Of Elements: 18
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 16: EEPROM Device Select Code
Most significant bit (b7) is sent first.
Table 17: EEPROM Operating Modes
09005aef80e487d7
DDF18C64_128x72HG_A.fm - Rev. A 10/03 EN
SELECT CODE
MODE
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA OUT
SDA IN
SCL
t SU:STA
Figure 14: SPD EEPROM Timing Diagram
RW BIT
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
IL
IL
IL
IL
t HIGH
DEVICE TYPE IDENTIFIER
b7
t HD:DAT
1
0
BYTES
£ 16
23
³ 1
1
1
1
1
b6
0
1
t DH
INITIAL SEQUENCE
START, Device Select, RW = ‘1’
START, Device Select, RW = ‘0’, Address
reSTART, Device Select, RW = ‘1’
Similar to Current or Random Address Read
START, Device Select, RW = ‘0’
START, Device Select, RW = ‘0’
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
512MB, 1GB (x72, ECC, DR)
t SU:DAT
b4
0
0
200-PIN DDR SODIMM
SA2
SA2
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
SA0
SA0
b1
t BUF
©2003 Micron Technology, Inc.
UNDEFINED
RW
RW
RW
B0