MT18VDDF12872HY-335D1 Micron Technology Inc, MT18VDDF12872HY-335D1 Datasheet - Page 25

• Manufacturer Part Number: MT18VDDF12872HY-335D1
• Description: MODULE SDRAM DDR 512MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872HY-335D1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.53A
• Number Of Elements: 18
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 20: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 26
09005aef80e487d7
DDF18C64_128x72HG_A.fm - Rev. A 10/03 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
0
1
2
3
4
5
6
7
8
9
Number of Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Rows Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data With
Module Data With (Continued)
Moduel Voltage Interface Levels
SDRAM Cycle Time, (
(See note 1)
SDRAM Access From Clock,(
CAS Latency = 2.5
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay, Back-to-Back Random
Column Access
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time, (
(See note 1)
SDRAM Access From CK, (
SDRAM Cycle Time, (
SDRAM Access From CK, (
CAS Latency = 1.5
Minimum Row Precharge Time, (
Minimum Row to Row Active, (
Minimum RAS# to CAS# Delay, (
Minimum RAS# Pulse Width, (
(See note 2)
Module Rank Density
DESCRIPTION
t
t
t
CK), CAS Latency = 2.5
CK), CAS Latency = 2
CK), CAS Latency = 1.5
t
t
AC), CAS Latency = 2
AC),
t
AC),
t
RAS)
t
RRD)
t
RCD)
t
RP)
0.75ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
Unbuffered/Diff. Clock
7.5ns (-335/-262/-26A)
15 ns (-262/-26A/-265)
45ns (-262/-26A/-265)
25
ENTRY (VERSION)
Fast/Concurrent AP
20ns (-26A/-265)
20ns (-26A/-265)
256MB, 512MB
7ns (-262/-26A)
SDRAM DDR
7.5ns( -265)
0.7ns (-335)
0.7ns (-335)
10ns (-265)
18ns (-335)
15ns (-262)
12ns (-335)
18ns (-335)
15ns (-262)
42ns (-335)
7.8µs/SELF
6ns (-335)
SSTL 2.5V
1 clock
11, 12
2, 4, 8
2, 2.5
ECC
ECC
N/A
N/A
128
256
13
72
x8
2
0
4
0
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MB, 1GB (x72, ECC, DR)
200-PIN DDR SODIMM
MT18VDDF6472H MT18VDDF12872H
0D
0A
A0
2A
2D
80
08
07
02
48
00
04
60
70
75
70
75
02
82
08
08
01
0E
04
0C
01
02
20
C0
75
70
75
00
00
48
3C
50
30
3C
48
3C
50
40
©2003 Micron Technology, Inc.
0D
A0
2A
2D
80
08
07
0B
02
48
00
04
60
70
75
70
75
02
82
08
08
01
0E
04
0C
01
02
20
C0
75
70
75
00
00
48
3C
50
30
3C
48
3C
50
80