BC309 Fairchild Semiconductor, BC309 Datasheet

BC309

Manufacturer Part Number

BC309

Description

PNP EPITAXIAL SILICON TRANSISTOR

Manufacturer

Fairchild Semiconductor

Datasheet

1.BC309.pdf (4 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors

PNP Silicon

REV 1

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Collector – Emitter Voltage

Collector – Base Voltage

Emitter – Base Voltage

Collector Current — Continuous

Total Device Dissipation @ T A = 25 C

Total Device Dissipation @ T C = 25 C

Operating and Storage Junction

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Collector – Emitter Breakdown Voltage

Emitter – Base Breakdown Voltage

Collector–Emitter Leakage Current

Motorola, Inc. 1997

Derate above 25 C

Temperature Range

(I C = –2.0 mAdc, I B = 0)

(I E = –100

(V CES = –50 V, V BE = 0)

(V CES = –30 V, V BE = 0)

(V CES = –50 V, V BE = 0) T A = 125 C

(V CES = –30 V, V BE = 0) T A = 125 C

Characteristic

Adc, I C = 0)

Rating

Characteristic

(T A = 25 C unless otherwise noted)

Symbol

T J , T stg

V CEO

V CBO

V EBO

P D

I C

BC307,B,C

BC308C

BC307,B,C

BC308C

BC307,B,C

BC308C

BC307,B,C

BC308C

BC307, B, C

–45

–50

– 55 to +150

BASE

–100

–5.0

Max

350

357

125

2.8

1.0

8.0

BC308C

COLLECTOR

–25

–30

EMITTER

V (BR)CEO

V (BR)EBO

Symbol

I CES

mW/ C

mAdc

Watts

Unit

Vdc

C/W

–5.0

Min

–45

–25

—

–0.2

Typ

—

CASE 29–04, STYLE 17

BC307B

BC307C

BC308C

TO–92 (TO–226AA)

BC307

Order this document

Max

–4.0

–15

—

by BC307/D

nAdc

Unit

Vdc

Related parts for BC309

BC309 Summary of contents

Page 1

... Collector–Emitter Leakage Current (V CES = – CES = – CES = – 125 C (V CES = – 125 C REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 COLLECTOR 1 2 BASE ...

... V BE(sat) — — V BE(on) –0. BC307,B,C — BC308C — C cbo — NF BC307,B,C — BC308C — Motorola Small–Signal Transistors, FETs and Diodes Device Data Typ Max Unit — 150 — 270 — — 800 290 460 500 800 180 — 300 — ...

Page 3

... 0.1 0.05 0.03 0.01 –0.1 –0.2 –0.5 –1.0 –2 COLLECTOR CURRENT (mAdc) Figure 5. Output Admittance Motorola Small–Signal Transistors, FETs and Diodes Device Data BC307 BC307B BC307C BC308C TYPICAL CHARACTERISTICS –1 –10 V –0 –0.8 –0.7 –0.6 –0.5 – ...

Page 4

... JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Small–Signal Transistors, FETs and Diodes Device Data NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...

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BC309 Fairchild Semiconductor, BC309 Datasheet

BC309

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BC309 Summary of contents

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