FDB8444 Fairchild Semiconductor, FDB8444 Datasheet

MOSFET N-CH 40V 70A TO-263AB

FDB8444

Manufacturer Part Number
FDB8444
Description
MOSFET N-CH 40V 70A TO-263AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB8444

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.5 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
128nC @ 10V
Input Capacitance (ciss) @ Vds
8035pF @ 25V
Power - Max
167W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0023 Ohms @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Power Dissipation
167 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB8444TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB8444
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDB8444
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2006 Fairchild Semiconductor Corporation
FDB8444 Rev A2 (W)
FDB8444
N-Channel PowerTrench
40V, 70A, 5.5mΩ
Features
Typ r
Typ Q
Low Miller Charge
Low Q
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
DS(on)
g(TOT)
rr
Body Diode
= 3.9mΩ at V
= 91nC at V
GATE
SOURCE
GS
GS
= 10V, I
= 10V
FDB SERIES
TO-263AB
D
= 70A
®
(FLANGE)
DRAIN
MOSFET
1
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Transmission
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
G
D
S
February 2006
www.fairchildsemi.com

Related parts for FDB8444

FDB8444 Summary of contents

Page 1

... Body Diode rr UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant GATE SOURCE TO-263AB FDB SERIES ©2006 Fairchild Semiconductor Corporation FDB8444 Rev A2 (W) ® MOSFET Applications Automotive Engine Control = 70A D Powertrain Management Solenoid and Motor Drivers Electronic Transmission ...

Page 2

... Total Gate Charge at 10V g(TOT) Q Threshold Gate Charge g(TH) Q Gate to Source Gate Charge gs Q Gate Charge Threshold to Plateau gs2 Q Gate to Drain “Miller” Charge gd FDB8444 Rev A2 ( 25°C unless otherwise noted C Parameter = 10V) (Note 1) GS (Note 2) 2 copper pad area Package Reel Size TO-263AB ...

Page 3

... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDB8444 Rev A2 ( 25°C unless otherwise noted ...

Page 4

... SINGLE PULSE 0. Figure 3. Normalized Maximum Transient Thermal Impedance 5000 1000 V = 10V GS TRANSCONDUCTANCE MAY LIMIT CURRENT 100 IN THIS REGION SINGLE PULSE FDB8444 Rev A2 (W) 100 125 150 175 ( Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION( RECTANGULAR PULSE DURATION(s) Figure 4 ...

Page 5

... D DUTY CYCLE = 0.5% MAX GATE TO SOURCE VOLTAGE V GS Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDB8444 Rev A2 (W) 500 10us ≠ 100 100us 10 1ms 10ms DC 1 0.01 100 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching ...

Page 6

... T , JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 1000 f = 1MHz 100 0 DRAIN TO SOURCE VOLTAGE DS Figure 13. Capacitance vs Drain to Source Voltage FDB8444 Rev A2 (W) 1. 250 µ 1.10 1.05 1.00 0.95 0.90 80 120 160 200 - Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDB8444 Rev A2 (W) ISOPLANAR™ PowerSaver™ LittleFET™ PowerTrench MICROCOUPLER™ QFET MicroFET™ QS™ MicroPak™ ...

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