FQPF7N65C Fairchild Semiconductor, FQPF7N65C Datasheet
FQPF7N65C
Specifications of FQPF7N65C
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FQPF7N65C Summary of contents
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... S FQP7N65C FQPF7N65C Units 650 4.2 4 212 1.6 mJ 4.5 V/ns 160 52 W 1.28 0.42 W/°C -55 to +150 °C 300 °C FQP7N65C FQPF7N65C Units 0.78 2.4 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, May 2004 ® ...
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... Repetitive Rating : Pulse width limited by maximum junction temperature 8mH 7A 50V Starting 7A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 650 520 125° ...
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... Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2000 1600 C iss 1200 C oss 800 C 400 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation Notes : ※ 1. 250µs Pulse Test ℃ Figure 2. Transfer Characteristics 10V 20V GS ※ ...
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... Figure 8. On-Resistance Variation 100 100 Figure 9-2. Maximum Safe Operating Area 125 150 ℃ Notes : ※ 3 - 100 150 200 Junction Temperature [ Temperature Operation in This Area is Limited by R DS(on 100 ※ Notes : 150 Single Pulse Drain-Source Voltage [V] DS for FQPF7N65C Rev. A, May 2004 ...
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... Typical Characteristics Figure 11. Transient Thermal Response Curve for FQP7N65C Figure 11-2. Transient Thermal Response Curve for FQPF7N65C ©2004 Fairchild Semiconductor Corporation (Continued) ※ tio ※ tio ( ℃ θ ( θ ( ℃ θ ( θ Rev. A, May 2004 ...
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... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...
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... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2004 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, May 2004 ...
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... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2004 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, May 2004 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ Bottomless™ FPS™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...