MPS8598 Fairchild Semiconductor, MPS8598 Datasheet

TRANSISTOR PNP GEN PURP TO-92

MPS8598

Manufacturer Part Number
MPS8598
Description
TRANSISTOR PNP GEN PURP TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MPS8598

Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Power - Max
625mW
Frequency - Transition
150MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
625 mW
Maximum Operating Frequency
150 MHz
Dc Collector/base Gain Hfe Min
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPS8598
Manufacturer:
ON
Quantity:
1 800
Part Number:
MPS8598
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
MPS8598RLRA
Manufacturer:
ON
Quantity:
86 990
MPS8598 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
MPS8598
PNP General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA.
• Sourced from Process 68.
Absolute Maximum Ratings
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
V
V
V
I
T
P
R
R
C
J
CBO
CEO
EBO
D
θJC
θJA
, T
Symbol
Symbol
STG
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Operating and Storage Junction Temperature Range
T
a
=25°C unless otherwise noted
T
C
Parameter
=25°C unless otherwise noted
Parameter
1
1. Emitter 2. Base 3. Collector
1
Max.
-55 ~ 150
83.3
625
200
Value
5.0
100
60
60
5
TO-92
September 2007
www.fairchildsemi.com
Units
Units
mW/°C
°C/W
°C/W
mW
mA
°C
V
V
V

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MPS8598 Summary of contents

Page 1

... Derate above 25°C R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA *Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”. © 2007 Fairchild Semiconductor Corporation MPS8598 Rev. 1.0.0 T =25°C unless otherwise noted C Parameter T =25°C unless otherwise noted a Parameter ...

Page 2

... These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150degrees C. © 2007 Fairchild Semiconductor Corporation MPS8598 Rev. 1.0.0 T =25°C unless otherwise noted C ...

Page 3

... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation MPS8598 Rev. 1.0.0 ® Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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