TN6725A Fairchild Semiconductor, TN6725A Datasheet

TN6725A

Manufacturer Part Number

TN6725A

Description

TRANS DARL NPN 50V 1.2A TO-226

Manufacturer

Fairchild Semiconductor

Datasheet

1.TN6725A_D26Z.pdf (3 pages)

Specifications of TN6725A

Transistor Type

NPN - Darlington

Current - Collector (ic) (max)

1.2A

Voltage - Collector Emitter Breakdown (max)

50V

Vce Saturation (max) @ Ib, Ic

1.5V @ 2mA, 1A

Dc Current Gain (hfe) (min) @ Ic, Vce

4000 @ 1A, 5V

Power - Max

Mounting Type

Through Hole

Package / Case

TO-92-3 (Long Body), TO-226

Configuration

Single

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

50 V

Emitter- Base Voltage Vebo

12 V

Collector- Base Voltage Vcbo

60 V

Maximum Dc Collector Current

1.2 A

Maximum Collector Cut-off Current

0.1 uA

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

4000

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Frequency - Transition

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TN6725A

Manufacturer:

FSC

Quantity:

843

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TN6725A

Manufacturer:

FSC

Quantity:

4 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TN6725A_D74Z

Manufacturer:

Fairchild Semiconductor

Quantity:

72 000

Current page: 1 of 3
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Symbol

Absolute Maximum Ratings*

1997 Fairchild Semiconductor Corporation

Thermal Characteristics

NPN Darlington Transistor

This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced

from Process 05. See MPSA14 for characteristics.

CES

CBO

EBO

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

Symbol

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

stg

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

C B

Derate above 25°C

TN6725A

Parameter

Characteristic

A = 25°C unless otherwise noted

TO-226

A = 25°C unless otherwise noted

Discrete Power & Signal

-55 to +150

Value

Technologies

TN6725A

1.2

Max

125

TN6725A, Rev A

mW/°C

Units

°C/W

°C

Related parts for TN6725A

TN6725A Summary of contents

Page 1

... Thermal Resistance, Junction to Case R JC Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation TO-226 25°C unless otherwise noted 25°C unless otherwise noted Characteristic Discrete Power & Signal Technologies Value Units 1.2 A -55 to +150 °C Max Units TN6725A mW/°C 50 °C/W 125 °C/W TN6725A, Rev A ...

Page 2

... Test: Pulse Width 300 s, Duty Cycle 1997 Fairchild Semiconductor Corporation 25°C unless otherwise noted Test Conditions 100 200 mA 500 mA 1A 200 mA 5 1MHz 200 mA f=100MHz C CE 1.0% Min Max 100 100 25,000 = 5 V 15,000 = 5 V 4000 40,000 1.0 1 TN6725A, Rev A Units ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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