PIC12F635-I/P Microchip Technology, PIC12F635-I/P Datasheet - Page 172

• Manufacturer Part Number: PIC12F635-I/P
• Description: IC MCU FLASH 1KX14 8DIP
• Manufacturer: Microchip Technology
• Series: PIC® 12Fr

Specifications of PIC12F635-I/P

• Program Memory Type: FLASH
• Program Memory Size: 1.75KB (1K x 14)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 20MHz
• Peripherals: Brown-out Detect/Reset, POR, WDT
• Number Of I /o: 5
• Eeprom Size: 128 x 8
• Ram Size: 64 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC12F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 64 B
• Interface Type: RS- 232/SPI/USB
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 2
• Operating Supply Voltage: 2 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DV164120, DM163029, DV164101, DM163014
• Minimum Operating Temperature: - 40 C
• Data Rom Size: 128 B
• Height: 3.3 mm
• Length: 9.27 mm
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2 V
• Width: 6.35 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: DM163029 - BOARD PICDEM FOR MECHATRONICSAC162057 - MPLAB ICD 2 HEADER 14DIPACICE0201 - MPLABICE 8P 300 MIL ADAPTERAC124001 - MODULE SKT PROMATEII 8DIP/SOIC
• Data Converters: -
• Connectivity: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC12F635/PIC16F636/639
15.3
DS41232D-page 170
DC CHARACTERISTICS
D020
D021
D022A
D022B
D023
D024A
D024B
D025
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 5.0V, 25 C unless otherwise stated. These parameters are for design guidance only
DC Characteristics: PIC12F635/PIC16F636-E (Extended) (Continued)
I
PD
and are not tested.
The test conditions for all I
rail-to-rail; all I/O pins tri-stated, pulled to V
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact
on the current consumption.
The peripheral current is the sum of the base I
eral is enabled. The peripheral
limit. Max values should be used when calculating total current consumption.
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
Sym
Power-down Base
Current
Device Characteristics
(4)
DD
measurements in Active Operation mode are: OSC1 = external square wave, from
current can be determined by subtracting the base I
Standard Operating Conditions (unless otherwise stated)
Operating temperature
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
DD
; MCLR = V
DD
Typ†
or I
0.15
0.20
0.35
32.3
120
1.0
2.0
3.0
4.5
5.0
6.0
42
85
22
25
33
60
30
45
75
39
59
98
PD
and the additional current consumed when this periph-
DD
Max
17.5
122
160
124
1.2
1.5
1.8
19
22
60
48
55
65
45
78
36
55
95
47
72
25
30
40
; WDT disabled.
Units
-40 C
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
T
V
2.0
3.0
5.0
2.0
3.0
5.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
A
DD
© 2007 Microchip Technology Inc.
+125 C for extended
WDT, BOR, Comparators,
V
WDT Current
BOR Current
PLVD Current
Comparator Current
CV
(high-range)
CV
(low-range)
T1OSC Current
DD
REF
Conditions
REF
REF
or I
and T1OSC disabled
PD
Current
Current
DD
current from this
.
Note
(1)
(1)
(1)
(1)
(3)
(1)