PIC24FJ16GA002-E/ML Microchip Technology, PIC24FJ16GA002-E/ML Datasheet - Page 52

IC PIC MCU FLASH 16K 28-QFN

PIC24FJ16GA002-E/ML

Manufacturer Part Number
PIC24FJ16GA002-E/ML
Description
IC PIC MCU FLASH 16K 28-QFN
Manufacturer
Microchip Technology
Series
PIC® 24Fr

Specifications of PIC24FJ16GA002-E/ML

Program Memory Type
FLASH
Program Memory Size
16KB (5.5K x 24)
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
Core Processor
PIC
Core Size
16-Bit
Speed
32MHz
Connectivity
I²C, PMP, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
21
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Processor Series
PIC24FJ
Core
PIC
Data Bus Width
16 bit
Data Ram Size
4 KB
Interface Type
I2C, IrDA, SPI, UART
Maximum Clock Frequency
32 MHz
Number Of Programmable I/os
21
Number Of Timers
5
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52713-733, 52714-737, 53276-922, EWDSPIC
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, DM240011, MA240013, AC164127, DM300027, DV164033, DM240002
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 10 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DM240011 - KIT STARTER MPLAB FOR PIC24F MCUAC162088 - HEADER MPLAB ICD2 24FJ64GA004 28AC164336 - MODULE SOCKET FOR PM3 28/44QFNDV164033 - KIT START EXPLORER 16 MPLAB ICD2
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC24FJ16GA002-E/ML
Manufacturer:
Microchip Technology
Quantity:
135
Part Number:
PIC24FJ16GA002-E/ML
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
process is:
PIC24FJ64GA004 FAMILY
5.5.1
The user can program one row of Flash program memory
at a time. To do this, it is necessary to erase the 8-row
erase block containing the desired row. The general
1.
2.
3.
EXAMPLE 5-1:
DS39881D-page 52
; Set up NVMCON for block erase operation
; Init pointer to row to be ERASED
Read
(512 instructions) and store in data RAM.
Update the program data in RAM with the
desired new data.
Erase the block (see Example 5-1):
a)
b)
c)
d)
e)
Set the NVMOP bits (NVMCON<3:0>) to
‘0010’ to configure for block erase. Set the
ERASE
(NVMCON<14>) bits.
Write the starting address of the block to be
erased into the TBLPAG and W registers.
Write 55h to NVMKEY.
Write AAh to NVMKEY.
Set the WR bit (NVMCON<15>). The erase
cycle begins and the CPU stalls for the dura-
tion of the erase cycle. When the erase is
done, the WR bit is cleared automatically.
MOV
MOV
MOV
MOV
MOV
TBLWTL W0, [W0]
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
eight
#0x4042, W0
W0, NVMCON
#tblpage(PROG_ADDR), W0
W0, TBLPAG
#tbloffset(PROG_ADDR), W0
#5
#0x55, W0
W0, NVMKEY
#0xAA, W1
W1, NVMKEY
NVMCON, #WR
(NVMCON<6>)
rows
ERASING A PROGRAM MEMORY BLOCK
of
program
and
memory
WREN
;
; Initialize NVMCON
;
; Initialize PM Page Boundary SFR
; Initialize in-page EA[15:0] pointer
; Set base address of erase block
; Block all interrupts with priority <7
; for next 5 instructions
; Write the 55 key
;
; Write the AA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
4.
5.
6.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
must wait for the programming time until programming
is complete. The two instructions following the start of
the programming sequence should be NOPs, as shown
in Example 5-3.
Write the first 64 instructions from data RAM into
the program memory buffers (see Example 5-1).
Write the program block to Flash memory:
a)
b)
c)
d)
Repeat steps 4 and 5, using the next available
64 instructions from the block in data RAM by
incrementing the value in TBLPAG, until all
512 instructions are written back to Flash
memory.
Set the NVMOP bits to ‘0001’ to configure
for row programming. Clear the ERASE bit
and set the WREN bit.
Write 55h to NVMKEY.
Write AAh to NVMKEY.
Set the WR bit. The programming cycle
begins and the CPU stalls for the duration
of the write cycle. When the write to Flash
memory is done, the WR bit is cleared
automatically.
 2010 Microchip Technology Inc.

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