AT91SAM9XE128-QU Atmel, AT91SAM9XE128-QU Datasheet - Page 97

• Manufacturer Part Number: AT91SAM9XE128-QU
• Description: MCU ARM9 128K FLASH 208-PQFP
• Manufacturer: Atmel
• Series: AT91SAMr

Specifications of AT91SAM9XE128-QU

• Core Processor: ARM9
• Core Size: 16/32-Bit
• Speed: 180MHz
• Connectivity: EBI/EMI, Ethernet, I²C, MMC, SPI, SSC, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 1.95 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 208-MQFP, 208-PQFP
• Processor Series: AT91SAMx
• Core: ARM926EJ-S
• Data Bus Width: 32 bit
• Data Ram Size: 16 KB
• Interface Type: 2-Wire, EBI, I2S, SPI, USART
• Maximum Clock Frequency: 180 MHz
• Number Of Programmable I/os: 96
• Number Of Timers: 6
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JTRACE-ARM-2M, KSK-AT91SAM9XE-PL, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: AT91SAM-ICE, AT91-ISP, AT91SAM9XE-EK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 4 Channel
• For Use With: AT91SAM9XE-EK - KIT EVAL FOR AT91SAM9XEAT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

14.3.4.1
14.3.4.2
6254C–ATARM–22-Jan-10
Flash Read Command
Flash Write Command
This command is used to read the Flash contents. The memory map is accessible through this
command. Memory is seen as an array of words (32-bit wide). The read command can start at
any valid address in the memory plane. This address must be word-aligned. The address is
automatically incremented.
Table 14-19. Read Command
This command is used to write the Flash contents. The address transmitted must be a valid
Flash address in the memory plane.
The Flash memory plane is organized into several pages. Data to be written is stored in a load
buffer that corresponds to a Flash memory page. The load buffer is automatically flushed to the
Flash:
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
Table 14-20. Write Command
Flash Write Page and Lock command (WPL) is equivalent to the Flash Write Command. How-
ever, the lock bit is automatically set at the end of the Flash write operation. As a lock region is
composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
Flash Erase Page and Write command (EWP) is equivalent to the Flash Write Command. How-
ever, before programming the load buffer, the page is erased.
Flash Erase Page and Write the Lock command (EWPL) combines EWP and WPL
commands.
Read/Write
Write
Write
Read
Read
...
Read
Read/Write
Write
Write
Write
Write
Write
Write
• before access to any page than the current one
• at the end of the number of words transmitted
DR Data
(Number of Words to Read) << 16 | READ
Address
Memory [address]
Memory [address+4]
...
Memory [address+(Number of Words to Read - 1)* 4]
DR Data
(Number of Words to Write) << 16 | (WP or WPL or EWP or EWPL)
Address
Memory [address]
Memory [address+4]
Memory [address+8]
Memory [address+(Number of Words to Write - 1)* 4]
AT91SAM9XE128/256/512 Preliminary
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