DSPIC30F4013-20E/PT Microchip Technology, DSPIC30F4013-20E/PT Datasheet - Page 46

• Manufacturer Part Number: DSPIC30F4013-20E/PT
• Description: IC DSPIC MCU/DSP 48K 44TQFP
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F4013-20E/PT

• Program Memory Type: FLASH
• Program Memory Size: 48KB (16K x 24)
• Package / Case: 44-TQFP, 44-VQFP
• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 20 MIPS
• Connectivity: CAN, I²C, SPI, UART/USART
• Peripherals: AC'97, Brown-out Detect/Reset, I²S, POR, PWM, WDT
• Number Of I /o: 30
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 13x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Product: DSCs
• Data Bus Width: 16 bit
• Processor Series: DSPIC30F
• Core: dsPIC
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 30
• Data Ram Size: 2 KB
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52713-733, 52714-737, 53276-922, EWDSPIC
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE4000, DM240002, DM300018, DM330011
• Minimum Operating Temperature: - 40 C
• Package: 44TQFP
• Device Core: dsPIC
• Family Name: dsPIC30
• Maximum Speed: 20 MHz
• Operating Supply Voltage: 3.3|5 V
• Interface Type: CAN/I2C/SPI/UART
• On-chip Adc: 13-chx12-bit
• Number Of Timers: 5
• Core Frequency: 20MHz
• Embedded Interface Type: CAN, I2C, SPI, UART
• No. Of I/o's: 30
• Flash Memory Size: 48KB
• Supply Voltage Range: 2.5V To 5.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: AC30F006 - MODULE SKT FOR DSPIC30F 44TQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DSPIC30F401320EPT

dsPIC30F3014/4013
5.6.3
Example 5-2 shows a sequence of instructions that
can be used to load the 96 bytes of write latches. 32
TBLWTL and 32 TBLWTH instructions are needed to
load the write latches selected by the Table Pointer.
EXAMPLE 5-2:
EXAMPLE 5-3:
DS70138E-page 44
; Set up a pointer to the first program memory location to be written
; program memory selected, and writes enabled
; Perform the TBLWT instructions to write the latches
; 0th_program_word
; 1st_program_word
;
; 31st_program_word
Note: In Example 5-2, the contents of the upper byte of W3 has no effect.
2nd_program_word
MOV
MOV
MOV
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
•
•
•
MOV
MOV
TBLWTL W2
TBLWTH W3
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
LOADING WRITE LATCHES
#0x0000,W0
W0
#0x6000,W0
#LOW_WORD_0,W2
#HIGH_BYTE_0,W3
#LOW_WORD_1,W2
#HIGH_BYTE_1,W3
#LOW_WORD_2,W2
#HIGH_BYTE_2,W3
#LOW_WORD_31,W2
#HIGH_BYTE_31,W3
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
,
,
,
,
,
,
,
LOADING WRITE LATCHES
INITIATING A PROGRAMMING SEQUENCE
TBLPAG
[W0]
[W0++]
[W0]
[W0++]
NVMKEY
NVMKEY
[W0]
[W0++]
[W0]
[W0++]
; Block all interrupts with priority <7 for
; next 5 instructions
;
; Write the 0x55 key
;
; Write the 0xAA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
;
; Initialize PM Page Boundary SFR
; An example program memory address
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
5.6.4
For protection, the write initiate sequence for NVMKEY
must be used to allow any erase or program operation
to proceed. After the programming command has been
executed, the user must wait for the programming time
until programming is complete. The two instructions
following the start of the programming sequence
should be NOPs as shown in Example 5-3.
INITIATING THE PROGRAMMING
SEQUENCE
© 2007 Microchip Technology Inc.