ST72F321BAR6T6 STMicroelectronics, ST72F321BAR6T6 Datasheet - Page 152
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ST72F321BAR6T6
Manufacturer Part Number
ST72F321BAR6T6
Description
MCU 8BIT 32KB FLASH/ROM 64-LQFP
Manufacturer
STMicroelectronics
Series
ST7r
Datasheet
1.ST72F321BK6T6.pdf
(187 pages)
Specifications of ST72F321BAR6T6
Core Processor
ST7
Core Size
8-Bit
Speed
8MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
48
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3.8 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Processor Series
ST72F3x
Core
ST7
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
I2C, SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
48
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
ST7232X-EVAL, ST7232X-SK/RAIS, ST72321B-D/RAIS, ST7MDT20-DVP3, ST7MDT20J-EMU3, ST7MDT20M-EMU3, STX-RLINK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 16 Channel
For Use With
497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Other names
497-5582
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ST72F321BAR6T6
Manufacturer:
STMicroelectronics
Quantity:
10 000
ST72321BRx, ST72321BARx ST72321BJx, ST72321BKx
12.7 EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
12.7.1 Functional EMS (Electro Magnetic
Susceptibility)
Based on a simple running application on the
product (toggling 2 LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs).
■
■
A device reset allows normal operations to be re-
sumed. The test results are given in the table be-
low based on the EMS levels and classes defined
in application note AN1709.
12.7.1.1 Designing hardened software to avoid
noise problems
EMC characterization and optimization are per-
formed at component level with a typical applica-
152/187
Symbol
ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to V
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
V
V
FESD
FFTB
Voltage limits to be applied on any I/O pin to induce a
functional disturbance
Fast transient voltage burst limits to be applied
through 100pF on V
tional disturbance
DD
Parameter
DD
and V
and V
DD
pins to induce a func-
SS
through
tion environment and simplified MCU software. It
should be noted that good EMC performance is
highly dependent on the user application and the
software in particular.
Therefore it is recommended that the user applies
EMC software optimization and prequalification
tests in relation with the EMC level requested for
his application.
Software recommendations:
The software flowchart must include the manage-
ment of runaway conditions such as:
– Corrupted program counter
– Unexpected reset
– Critical Data corruption (control registers...)
Prequalification trials:
Most of the common failures (unexpected reset
and program counter corruption) can be repro-
duced by manually forcing a low state on the RE-
SET pin or the Oscillator pins for 1 second.
To complete these trials, ESD stress can be ap-
plied directly on the device, over the range of
specification values. When unexpected behaviour
is detected, the software can be hardened to pre-
vent unrecoverable errors occurring (see applica-
tion note AN1015).
All Flash and ROM devices, V
T
1000-4-2
32K Flash device LQFP44/LQFP32, :
V
forms to IEC 1000-4-4
48/60K Flash and all ROM devices,
V
forms to IEC 1000-4-4
A
DD
DD
=+25°C, f
=5V, T
=5V, T
A
A
=+25°C, f
=+25°C, f
OSC
Conditions
=8 MHz, conforms to IEC
OSC
OSC
=8 MHz, con-
=8 MHz, con-
DD
=5V,
Level/
Class
3B
3B
4A