STM32F103R8H7 STMicroelectronics, STM32F103R8H7 Datasheet - Page 56

• Manufacturer Part Number: STM32F103R8H7
• Description: MCU 32BIT 64K FLASH 64BGA
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32F103R8H7

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
• Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
• Number Of I /o: 51
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 20K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 64-LFBGA
• Processor Series: STM32F103x
• Core: ARM Cortex M3
• 3rd Party Development Tools: EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: ST-LINK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Electrical characteristics
5.3.10
56/99
Table 28.
1. Guaranteed by design, not tested in production.
Table 29.
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Symbol
Symbol
N
V
t
I
RET
DD
prog
END
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Supply current
Programming voltage
Endurance
Data retention
Parameter
Flash memory characteristics (continued)
Flash memory endurance and data retention
Parameter
T
T
1 kcycle
1 kcycle
10 kcycles
A
A
= –40 to +105 °C (7 suffix versions)
Table
= –40 to +85 °C (6 suffix versions)
Doc ID 13587 Rev 13
(2)
(2)
Read mode
f
states, V
Write / Erase modes
f
Power-down mode / Halt,
V
30. They are based on the EMS levels and classes
HCLK
HCLK
DD
(2)
at T
at T
at T
Conditions
= 3.0 to 3.6 V
A
A
= 72 MHz with 2 wait
= 72 MHz, V
= 85 °C
= 105 °C
A
DD
Conditions
= 55 °C
= 3.3 V
DD
= 3.3 V
STM32F103x8, STM32F103xB
Min
Min
30
10
20
10
2
(1)
(1)
Value
Typ
Typ
Max
Max
3.6
20
50
5
(1)
DD
kcycles
and
Years
Unit
Unit
mA
mA
µA
V