STM32F103R8H7 STMicroelectronics, STM32F103R8H7 Datasheet - Page 60
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STM32F103R8H7
Manufacturer Part Number
STM32F103R8H7
Description
MCU 32BIT 64K FLASH 64BGA
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32F103R8H6.pdf
(99 pages)
Specifications of STM32F103R8H7
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
72MHz
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
51
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
64-LFBGA
Processor Series
STM32F103x
Core
ARM Cortex M3
3rd Party Development Tools
EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
ST-LINK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32F103R8H7
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical characteristics
5.3.13
Table 35.
1. FT = Five-volt tolerant. In order to sustain a voltage higher than V
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.
3. With a minimum of 100 mV.
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
60/99
Symbol
V
R
R
C
V
V
I
disabled.
PMOS/NMOS contribution
lkg
hys
PU
PD
IH
IO
IL
Standard IO input low
level voltage
IO FT
voltage
Standard IO input high
level voltage
IO FT
voltage
Standard IO Schmitt
trigger voltage
hysteresis
IO FT Schmitt trigger
voltage hysteresis
Input leakage current
Weak pull-up equivalent
resistor
Weak pull-down
equivalent resistor
I/O pin capacitance
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in
performed under the conditions summarized in
compliant.
I/O static characteristics
(1)
(1)
Parameter
(5)
input low level
input high level
(2)
to the series resistance is minimum
(2)
(5)
(4)
V
V
V
DD
DD
Standard I/Os
SS
Conditions
V
V
> 2 V
≤
V
≤
I/O FT
IN
IN
IN
2 V
V
=
=
= 5 V
IN
V
V
≤
DD
Doc ID 13587 Rev 13
SS
V
DD
(~10% order)
0.41*(V
0.42*(V
5% V
DD
DD
+0.3 the internal pull-up/pull-down resistors must be
DD
–0.3
–0.3
Min
200
30
30
-2 V)+1.3 V
Table
-2 V)+1 V
DD
.
(3)
Table 35
9. All I/Os are CMOS and TTL
Typ
40
40
STM32F103x8, STM32F103xB
5
are derived from tests
0.32*(V
0.28*(V
V
DD
DD
DD
Max
5.5
5.2
50
50
±1
-2V)+0.75 V
-2 V)+0.8 V
3
+0.3
Unit
mV
mV
µA
kΩ
kΩ
pF
V
V
V
V