ST10F269Z2Q6 STMicroelectronics, ST10F269Z2Q6 Datasheet - Page 17

• Manufacturer Part Number: ST10F269Z2Q6
• Description: MCU 16BIT 256K FLASH 144PQFP
• Manufacturer: STMicroelectronics
• Series: ST10r

Specifications of ST10F269Z2Q6

• Core Processor: ST10
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: CAN, EBI/EMI, SSC, UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 111
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-QFP
• Controller Family/series: ST10
• No. Of I/o's: 111
• Ram Memory Size: 12KB
• Cpu Speed: 40MHz
• No. Of Timers: 5
• Embedded Interface Type: CAN, SSC, USART
• Rohs Compliant: Yes
• Processor Series: ST10F26x
• Core: ST10
• Data Bus Width: 16 bit
• Data Ram Size: 12 KB
• Interface Type: CAN, SSC, USART
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 111
• Number Of Timers: 2 x 16 bit
• Operating Supply Voltage: 0.3 V to 4 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 16 bit x 10 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-4833

5 - INTERNAL FLASH MEMORY
5.1 - Overview
– 256K Byte on-chip Flash memory
– Two possibilities of Flash mapping into the CPU
– Flash memory can be used for code and data
– 32-bit, zero waitstate read access (62.5ns cycle
– Erase-Program Controller (EPC) similar to
– Memory Erase in blocks
Table 2 : 256K Byte Flash Memory Block Organization
• Word-by-Word Programmable (16µs typical)
• Data polling and Toggle Protocol for EPC
• Ready/Busy signal connected on XP2INT
• Internal Power-On detection circuit
• One 16K Byte, two 8K Byte, one 32K Byte,
• Each
• Chip erase (8.5 second typical)
• Each block can be separately protected
• Each protected block can be temporary unpro-
• When enabled, the read protection prevents
address space
storage
time at f
M29F400B STM’s stand-alone Flash memory
Status
interrupt line
three 64K Byte blocks
(1.5 second typical)
against programming and erasing
tected
access to data in Flash memory using a pro-
gram running out of the Flash memory space.
CPU
Block
block
0
1
2
3
4
5
6
= 32MHz)
can
be
Addresses (Segment 0)
01’8000h to 01’FFFFh
02’0000h to 02’FFFFh
03’0000h to 03’FFFFh
04’0000h to 04’FFFFh
00’0000h to 00’3FFFh
00’4000h to 00’5FFFh
00’6000h to 00’7FFFh
erased
separately
Addresses (Segment 1)
– Erase Suspend and Resume Modes
– Single Voltage operation, no need of dedicated
– Low Power Consumption:
– 100,000 Erase-Program Cycles per block,
– Operating temperature: -40 to +125
5.2 - Operational Overview
Read Mode
In standard mode (the normal operating mode)
the Flash appears like an on-chip ROM with the
same timing and functionality. The Flash module
offers a fast access time, allowing zero waitstate
access with CPU frequency up to 32MHz.
Instruction fetches and data operand reads are
performed with all addressing modes of the
ST10F269-T3 instruction set.
In order to optimize the programming time of the
internal Flash, blocks of 8K Bytes, 16K Bytes,
32K Bytes, 64K Bytes can be used. But the size of
the blocks does not apply to the whole memory
space, see details in Table 2.
01’0000h to 01’3FFFh
01’4000h to 01’5FFFh
01’6000h to 01’7FFFh
01’8000h to 01’FFFFh
02’0000h to 02’FFFFh
03’0000h to 03’FFFFh
04’0000h to 04’FFFFh
• Read and Program another Block during erase
• 45mA max. Read current
• 60mA max. Program or Erase current
• Automatic Stand-by-mode (50µA maximum)
Access to data of internal Flash can only be per-
formed with an inner protected program
suspend
supply pin
20 years of data retention time
Size (byte)
ST10F269-T3
16K
32K
64K
64K
64K
8K
8K
o
C
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