COP8CCE9IMT7/NOPB National Semiconductor, COP8CCE9IMT7/NOPB Datasheet - Page 11

• Manufacturer Part Number: COP8CCE9IMT7/NOPB
• Description: MCU 8BIT FLASH 8K MEM 48-TSSOP
• Manufacturer: National Semiconductor
• Series: COP8™ 8Cr

Specifications of COP8CCE9IMT7/NOPB

• Core Processor: COP8
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: Microwire/Plus (SPI), UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-TSSOP
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 10 MHz
• Data Ram Size: 256 B
• On-chip Adc: 10 bit, 16 channel
• Number Of Programmable I/os: 37
• Number Of Timers: 2
• Height: 0.9 mm
• Interface Type: SPI, USART
• Length: 12.5 mm
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.7 V
• Width: 6.1 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: COP8CCE9IMT7

Output Current Levels
B0-B3 Outputs
All Others
TRI-STATE Leakage
Maximum Input Current without Latchup (Note 5)
RAM Retention Voltage, V
Input Capacitance
Voltage on G6 to Force Execution from Boot
ROM(Note 8)
G6 Rise Time to Force Execution from Boot ROM
Input Current on G6 when Input
Flash Memory Data Retention
Flash Memory Number of Erase/Write Cycles
8.0 Electrical Characteristics
DC Electrical Characteristics (0˚C ≤ T
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
AC Electrical Characteristics (0˚C ≤ T
Instruction Cycle Time (t
Flash Memory Page Erase Time
Flash Memory Mass Erase Time
Frequency of MICROWIRE/PLUS in
Slave Mode
MICROWIRE/PLUS Setup Time (t
MICROWIRE/PLUS Hold Time (t
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode) (Note 7)
Sink (Push-Pull Mode) (Note 7)
Allowable Sink and Source Current per Pin
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 7)
Allowable Sink and Source Current per Pin
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Crystal/Resonator
(COP8CBE9)
(COP8CCE9)
Parameter
Parameter
C
R
)
(in HALT Mode)
>
UWH
V
UWS
CC
)
)
2.7V ≤ V
4.5V ≤ V
See Table 13, Typical
Flash Memory
Endurance
(Continued)
V
V
V
V
V
V
V
V
V
V
V
V
V
G6 rise time must be slower
than 100 ns
V
25˚C
See Table 13, Typical Flash
Memory Endurance
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
IN
Conditions
= 11V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 5.5V
CC
CC
≤ 5.5V
≤ 5.5V
Conditions
A
11
A
CC
OH
OH
OH
OH
OL
OL
OH
OH
OH
OH
OL
OL
≤ +70˚C)
≤ +70˚C)
= 5.5V
= 0.3V
= 0.3V
= 1.0V
= 0.4V
= 3.8V
= 1.8V
= 4.2V
= 2.4V
= 3.8V
= 1.8V
= 3.8V
= 1.8V
(Note
(Note
Min
1.5
10)
0.5
20
20
9)
(Continued)
2 x V
−0.5
Min
−10
−10
−10
100
3.5
2.0
−6
10
−5
−7
−4
10
-5
6
CC
Typ
1
8
Typ
500
100
10
5
Max
DC
DC
2
V
±
CC
Max
+0.5
20
15
200
7
+ 7
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Units
MHz
ms
ms
µs
µs
ns
ns
cycles
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
yrs
µA
µA
µA
µA
µA
pF
nS
µA
V
V